45KMB Search Results

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR 1024x4 Static RAM Functional Description • Automatic power-down when d ese­ lected 7C148 TheC Y 7C 148 a n d CY 7C149 arehigh-perform ance C M O S static R A M s organized as 1024 by 4 bits. Easy m em ory expansion

Contextual Info: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM

33AO

Contextual Info: ss CY7C170A B>'ss c y p r e s s SEMICONDUCTOR — 4096 x 4 Static RAV RAM Features Functional Description • CMOS for optimum speed/power The CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is provided by an active LOW chip select

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7CI48 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 605 mW (military) Low standby power (7C148) — 82.5 mW (25-ns version)

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­

Contextual Info: CY7C281 CY7C282 I CYPRESS IK x 8 PROM SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

Contextual Info: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power

TAA 293A

Abstract: CY7C smd code LY Q
Contextual Info: CY7C291A CY7C292A/CY7C293A r ' Y P P P ’C jc ; —- SEMICONDUCTOR Reprogrammable 2K x 8 PROM • Direct replacement for bipolar PROMi • Capable of withstanding > 2001V stat­ ic discharge Features • W indowed fo r rep ro g ram m ab ility • C M O S Tor o p tim u m speed/pow er

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

Contextual Info: CY7C128 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed The CY7C128 is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

7c198

Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
Contextual Info: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac­

CY7C128A SRAM

Abstract: 7C128A-55 128a
Contextual Info: _ CY7C128A ^ S fcO N D U d O R 2048 x 8 Static R/W RAM Features • Capable o f w ithstanding greater than 2001V electrostatic discharge • Automatic power-down when deselected • V ih o f 2.2V • CMOS for optimum speed/power Functional Description

7C271

Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Contextual Info: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)

1531B

Abstract: 3AAG CY7C281A CY7C282A CY7C281A-45PC CY7C281A-45JC
Contextual Info: CY7C281A CY7C282A CYPRESS Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

CY7CI99-55KMB

Abstract: 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 CY7C198 CY7C199 cy7c199-25vc
Contextual Info: CY7C198 CY7C199 CYPRESS -= s SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power ■ High speed — 25 ns • h ow active power The CY7C198 and CY7C199 are highperformance CMOS static RAM s orga­

CY7C291A

Abstract: CY7C292A CY7C293A 57C29
Contextual Info: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­

Contextual Info: CY7C187A 5T CYPRESS SEMICONDUCTOR 65,536 x 1 S tatic R /W R A M Features Functional Description • Automatic power-down when deaelected The CY7C187A is a high-performance CMOS static RAM organized as 65,536 words by 1 b it Easy memory expansion is provided by an active LOW chip enable

C1985

Contextual Info: CY7C198 CY7C199 CYPRESS W SEMICONDUCTOR F unctional D escription Automatic power-down when deselected CMOS for optimum speed/power High speed — 25 os Low active power — 880 mW Low standby power — 220 raW TTL-compatible inputs and outputs Capable o f w ithstanding greater than

Contextual Info: — CY7C281 CY7C282 - :ï CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (m ilitary) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP