C271 Search Results

T13V

Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: TSV250-130F-B-0.5 DOCUMENT: SCD 26244 PCN: C27178-000 REV LETTER: A REV DATE: JUNE 27, 2005

8032B-P

Abstract: 8031A-P smd code 842 80C515A-N18-T3 sab 8031a 80c535-n-t40 8032B-16-P 80C515-16-N 80c535-16-n 8031a-20-p
Contextual Info: Mikrocontroller Bausteine Microcontroller Components 8-Bit Single-Chip Mikrocontroller 8-Bit Single-Chip Microcontrollers Typ Type SAB 8031A-N SAB 8031A-P Bestellnummer Ordering Code Q67120-C271 Q67120-C183 Gehäuse Package P-LCC-44-1 P-DIP-40-1 SAB 8031A-16-N

Contextual Info: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C2719 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C2719 is used with the

C2719

Abstract: S2281 S2281-01 S2281-04 S7160 S2281 equivalent C-2719
Contextual Info: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C2719 photosensor amplifier S2281-01 cannot be connected . Two different spectral response characteristics are provided and the large active

transistor marking wr1 sot-23

Abstract: WR1 SOT23 WR1 marking code marking 6k sot-23 package DTA143ZN3 DTC143ZN3 transistor digital 47k 22k PNP NPN 6K SOT23 6K MARKING CODE DTC143ZN
Contextual Info: Spec. No. : C271N3 Issued Date : 2005.07.29 Revised Date : Page No. : 1/6 CYStech Electronics Corp. PNP Digital Transistors Built-in Resistors DTA143ZN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external

C2719

Abstract: BNC connector S2281 S2281-01 S2281-04 S9219
Contextual Info: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C2719 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C2719 is used with the

C2710

Contextual Info: C orpora te Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > C ircuit Protection Devices > Product Feature Selector > Product Details C2710 Product Details

E2573

Abstract: 006P C2719 S2281 dc voltmeter circuit diagrams COAXIAL CABLE 1.5D-2V pen drive amplifier circuit diagrams
Contextual Info: MODULE Photosensor amplifier C2719 Current-to-voltage conversion amplifier for amplifying weak photocurrent with low noise C2719 is a current-to-voltage conversion amplifier used to amplify weak photocurrent from a photodiode with very low noise. Three ranges of

Contextual Info: PolySwitch PTC Devices PRODUCT: TSV250-130F-B-0.5 DOCUMENT: SCD26244 PCN: C27178-000 REV LETTER: C REV DATE: JUNE 21, 2011 PAGE NO.: 1 OF 1 Overcurrent Protection Device Specification Status: Released Max Electrical Rating at 20°C Operating Voltage: 60VDC

C2719

Abstract: E2573 photodiode amplifier 006P S2281 COAXIAL CABLE 1.5D-2V
Contextual Info: MODULE Photosensor amplifier C2719 Current-to-voltage conversion amplifier for amplifying weak photocurrent with low noise C2719 is a current-to-voltage conversion amplifier used to amplify weak photocurrent from a photodiode with very low noise. Three ranges of

C2714

Abstract: 2SC2714
Contextual Info: C2714 C2714 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 40 V Collector-Emitter Voltage

c2710

Contextual Info: C2710 REV Product Description EIA date code and lot code D GlobeSpan DLC Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage [8.61 MAX] 0.339 MAX Customer Terminal #1 Indicator A COEV C2710 XXXXX [1.14 MAX] 0.045 MAX

6k marking

Abstract: DTA143ZS3 DTC143ZS3
Contextual Info: Spec. No. : C271S3 Issued Date : 2003.06.20 Revised Date : Page No. : 1/3 CYStech Electronics Corp. PNP Digital Transistors Built-in Resistors DTA143ZS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external

DTA143Z

Abstract: HBA143ZS6R HBC143ZS6R marking 0K TRANSISTOR HBA
Contextual Info: Spec. No. : C271S6R Issued Date : 2003.09.05 Revised Date : Page No. : 1/3 CYStech Electronics Corp. Dual PNP Digital Transistors Built-in Resistors HBA143ZS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

JTI_2450BM15A0002

Abstract: 2450BM15A0002 c47p SmartRF05BB P10 led 1u040 stl21 c10p040 CC2530ZDK Sensor Demo 2450BM15A000
Contextual Info: CC2530 ZigBee Development Kit User’s Guide swru209b swru209b Table of contents CC2530 ZIGBEE DEVELOPMENT KIT USER’S GUIDE . 1 1 INTRODUCTION. 3

TVL320AIC3106

Abstract: AIC3106 RJ9 connector BLMG1P500SPT TVL320 RPACK8-10 HALO HFJ11-2450E-L21 connector Rj9 HFJ11-2450E-l21 MHC-W21-601
Contextual Info: OMAP-L137 Evaluation Module Technical Reference 2008 DSP Development Systems OMAP-L137 Evaluation Module Technical Reference 511345-0001 Rev. A November 2008 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310

ENC4310

Abstract: ENC271 VARISTOR C271D varistor ENC series C271D-07A ENC431D-05A ENC751D-10A C221-D1 ENC112D-14A ENC390D-05B
Contextual Info: F U JI GiUMëüTBDe Z-TRAP SURGE SUPPRESSORS € ENC Series Radial package Ratings and characteristics table Device type Chip element Maximum ratings Characteristics Applied voltage 0 Transient RMS 50/60HZ 25*C Energy Average power dissipa­ tion Peak (D

DS377

Contextual Info: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

2450BM15A0002

Abstract: SmartRF05 HMC16311SF-PY JTI_2450BM15A0002 srf05 microcontroller based energy meters 8051 SFM-110-02-SM-D-A-K-TR tfm-110-02 swru187 CC2530
Contextual Info: CC2530 Development Kit User’s Guide swru208b swru208b Table of contents CC2530 Development Kit User’s Guide .1 1 Introduction .3

IRGPF50F

Abstract: al c269
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

h22 8-pin

Abstract: J68 10A PL-20A DC3BE J119 J1266 1J44 PL34A JITo-2-dc3 J127
Contextual Info: ORLI10G ver. 1.5 1 01/29/03 Lattice Semiconductor Corp SECTION PAGE LAYOUT OF ORLI10G BOARD: 3 CONNECTORS AND JUMPERS J1 TO J127: 4 CONNECTORS CON1 TO CON5: 18 ADJUSTABLE RESISTORS: 22 ORLI10G ver. 1.5 2 01/29/03 Lattice Semiconductor Corp Layout of ORLI10G board:

rk903

Abstract: DTC34LM85A CE7121MM33 ALC5631 DTC34LM85 ESDA6V8 DTC34LM85AL CM3217 QFN48 6x6 ALC5631Q
Contextual Info: 5 4 C B 2 1 PCB POWER WIRE WIDTH INDICATE CONTENT INDEXING D 3 01. INDEX 02.Modify note 03.Block Diagram 04.SYSTEM POWER DIAGRAM 05.DC/CHARG 06.SYSTEM POWER 07.USB OTG/VIB 08.DDR3 09.FLASH/SD 10.GPIO 11.AUDIO 12.LCD PANEL 13.TOUCH PANEL 14.HDMI/ATSC 15.CAMERA/G_SENSOR/KEY/COMP/IR

MB8516

Abstract: MSM2716AS mb8516h C2716 M5L2716K-65 mb8516 fujitsu MCM2716C UPD2716D HM462716G TMS2516
Contextual Info: - 12 7 16 7» + y iâiëïcK] m « ï± £ rc TAAC max ns) TCAC max (ns) TOH max (ns) n te TOE mai (ns) TOD max (ns) VDD (V) A m 1 DD/STANDBY (mA) VIL max (V) tti j l / M -h VIH min (V) £ € üfi (I C i max (pF) V O L / 1 VOL max (V/mA) VOH/IVOH min (V/mA)

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for