CY7C164A Search Results

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­

Contextual Info: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power

Contextual Info: CY7C164A _ CY7C166A SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when deselected The CY7C164A and CY7C166A are highperformance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­

C164A-2

Abstract: CY7C164A CY7C166A
Contextual Info: CY7C164A CY7C166A 16K x 4 Static RAM Features D The CY7C164A and CY7C166A are highĆ performance CMOS static RAMs orgaĆ as 16,384 by 4 bits. Easy memory exĆ nized pansion is provided by an active LOW chip enable CE) and threeĆstate drivers. The CY7C166A has an active low output enĆ

Contextual Info: CY7C164A CY7C166A 16Kx 4 Static RAM Features Functional Description • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

C164A-2

Abstract: CY7C164A CY7C166A 2102 ram AM716
Contextual Info: CY7C164A CY7C166A '# CYPRESS 16K x 4 Static RAM Features Functional D escription • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 raW • Low standby power — 220 raW • TTL-compatible inputs and outputs

5 pin A13E

Abstract: A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e
Contextual Info: CY7C164 CY7C166 Ì CYPRESS SEMICONDUCTOR 16Kx 4 Static RAM Features Functional Description • High speed — IS ns The CY7C164and CY7C166 are high-per­ formance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expan­ sion is provided by an active LOW chip en­

C104A

Abstract: C104A-0
Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

C1645

Abstract: 7c166 CY7C164-20PC CY7C164-20VC CY7C164-25VC CY7C164-35PC CY7C164 CY7C164-15PC CY7C164-15VC C1647
Contextual Info: CY7C164 CY7C166 16K x 4 Static RAM Features Functional Description • High speed — 15 ns • Output enable OE feature (7C166) The CY7C164and CY7C166 arehigh-performance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expan­ sion is provided by an active LOW chip en­

L1112

Abstract: 3 phase inverter schematic diagram CY7C164A CY7C166A circuit 4810
Contextual Info: CYPRESS 4DE SEMICONDUCTOR D m 2SÖ%b2 □ 0 0 4 ö ci l 3 I CYP T ^ ' ï i - i o CY7C164A CY7C166A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM I/Oj is written into the memory location specified on the address pins Ao through F u nctional D escription

CY7C164A

Abstract: CY7C166A
Contextual Info: CY7C164A CY7C166A W CYPRESS 16K x 4 Static RAM Features Functional Description • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 mW • Low standby power T he CY7C164A and CY7C166A are high­

Contextual Info: CYPRESS SEMICONDUCTOR bSE D • 550^2 □QD'lflSb DMT « C Y P CY7C164A CY7C166A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Functional Description • High speed — 20 ns • Output enable ÖE feature (7C166A) • CMOS for optimum speed/power • Low active power

Contextual Info: CY7C164A CY7C166A W CYPRESS 16K x 4 Static RAM Features Functional Description • High speed — 20 ns T he CY7C164A and CY7C166A are highperform ance CM O S static RAM s orga­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion is provided by an active LO W chip

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Functional Description • High speed — 2 0 ns T he C Y 7C164A and C Y 7C166A are highp erform ance C M O S static R A M s org a­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion is provided by an active L O W chip

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Functional Description • High speed — 20 ns T he C Y 7C164A an d C Y 7C166A are highperfo rm an ce C M O S static R A M s orga­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion is provided by an active L O W chip

D10 7C TL5

Abstract: F2827
Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features Functional D escrip tion • Automatic power-down when deselected T he CY7C164A and CY 7C166A are highperform ance C M O S static R A M s o rg a ­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion isp ro v id ed by an active L O W chip

K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

cy7c9101

Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Contextual Info: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22