7C164A Search Results

Contextual Info: 7C164A CY7C166A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Functional Description • High speed — 2 0 ns T he C Y 7C164A and C Y 7C166A are highp erform ance C M O S static R A M s org a­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion is provided by an active L O W chip

Contextual Info: 7C164A CY7C166A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Functional Description • High speed — 20 ns T he C Y 7C164A an d C Y 7C166A are highperfo rm an ce C M O S static R A M s orga­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion is provided by an active L O W chip

K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

cmos SRAM 35ns 8k X 8 dip

Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
Contextual Info: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: 7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The 7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­

Contextual Info: 7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power

Contextual Info: 7C164A _ CY7C166A SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when deselected The 7C164A and CY7C166A are highperformance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­

C164A-2

Abstract: CY7C164A CY7C166A
Contextual Info: 7C164A CY7C166A 16K x 4 Static RAM Features D The 7C164A and CY7C166A are highĆ performance CMOS static RAMs orgaĆ as 16,384 by 4 bits. Easy memory exĆ nized pansion is provided by an active LOW chip enable CE) and threeĆstate drivers. The CY7C166A has an active low output enĆ

Contextual Info: 7C164A CY7C166A 16Kx 4 Static RAM Features Functional Description • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

C164A-2

Abstract: CY7C164A CY7C166A 2102 ram AM716
Contextual Info: 7C164A CY7C166A '# CYPRESS 16K x 4 Static RAM Features Functional D escription • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 raW • Low standby power — 220 raW • TTL-compatible inputs and outputs

C104A

Abstract: C104A-0
Contextual Info: 7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

L1112

Abstract: 3 phase inverter schematic diagram CY7C164A CY7C166A circuit 4810
Contextual Info: CYPRESS 4DE SEMICONDUCTOR D m 2SÖ%b2 □ 0 0 4 ö ci l 3 I CYP T ^ ' ï i - i o 7C164A CY7C166A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM I/Oj is written into the memory location specified on the address pins Ao through F u nctional D escription

CY7C164A

Abstract: CY7C166A
Contextual Info: 7C164A CY7C166A W CYPRESS 16K x 4 Static RAM Features Functional Description • High speed — 20 ns • Output enable OE feature (7C166A) • CMOS for optimum speed/power • Low active power — 550 mW • Low standby power T he 7C164A and CY7C166A are high­

C164A-2

Abstract: CY7C164A CY7C166A CYC164A CYC166A C164A
Contextual Info: CYC164A CYC166A 16K x 4 Static RAM Features three-state drivers. The CY7C166A has an active low output enable OE feature. Both devices have an automatic power-down feature, reducing the power consumption by 60% when deselected. • High speed — 20 ns • Output enable (OE) feature (7C166A)

Contextual Info: CYPRESS SEMICONDUCTOR bSE D • 550^2 □QD'lflSb DMT « C Y P 7C164A CY7C166A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Functional Description • High speed — 20 ns • Output enable ÖE feature (7C166A) • CMOS for optimum speed/power • Low active power

Contextual Info: 7C164A CY7C166A W CYPRESS 16K x 4 Static RAM Features Functional Description • High speed — 20 ns T he 7C164A and CY7C166A are highperform ance CM O S static RAM s orga­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion is provided by an active LO W chip

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

C164A-2

Abstract: CY7C164A CY7C166A CYC164A CYC166A C164A CY7C164A-35DM
Contextual Info: 1CY C1 66 A CYC164A CYC166A 16K x 4 Static RAM three-state drivers. The CY7C166A has an active low output enable OE feature. Both devices have an automatic power-down feature, reducing the power consumption by 60% when deselected. Features • High speed

Contextual Info: C Y C 1 6 4 A C Y C 1 6 6 A 16K x 4 Static RAM Features three-state drivers. The CY7C166A has an active low output enable OE feature. Both devices have an automatic power-down feature, reducing the power consumption by 60% when deselected. • High speed

D10 7C TL5

Abstract: F2827
Contextual Info: 7C164A CY7C166A CYPRESS SEMICONDUCTOR Features Functional D escrip tion • Automatic power-down when deselected T he 7C164A and CY 7C166A are highperform ance C M O S static R A M s o rg a ­ nized as 16,384 by 4 bits. Easy m em ory ex­ pansion isp ro v id ed by an active L O W chip