7C282 Search Results

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

RE 5 TA

Abstract: CY7C281
Contextual Info: CY7C281 7C282 " s CYPRESS 1024 x 8 PROM SEMICONDUCTOR Features • C M O S for optimum sp eed / power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • E P R O M technology 100% programmable

Generic PROM Family

Abstract: sumitomo epoxy CY7C225A CY7C235A EME-6300H UL-94V0
Contextual Info: Qualification Report August 1993, CTP# 930305 Version 1.0 4K/8K PROM - PROM20 PROCESS FAMILY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C225A 512 x 8 Registered PROM CY7C235A 1024 x 8 Registered PROM CY7C281/2A 1024 x 8 PROM PRODUCT DESCRIPTION for qualification

CY7C281A

Abstract: CY7C282A CERPACK K73 CY7C281A-45JC
Contextual Info: 1CY 7C28 2A CY7C281A 7C282A 1K x 8 PROM Features tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

CY7C281A-45JC

Contextual Info: 82A CY7C281A 7C282A 1K x 8 PROM Features tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY7C281 7C282 I CYPRESS IK x 8 PROM SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

7C281

Abstract: K73 Package C281A CY7C281A CY7C282A CYPRESS CY7C281 CY7C281A-45JC CY7C281A-45DMB d4590 7C281A
Contextual Info: CY7C281A 7C282A 1K x 8 PROM D Features D D D D static discharge CMOS for optimum speed/power Ċ Ċ Ċ Ċ Functional Description High speed 25 ns commercial 30 ns (military) Low power 495 mW (commercial) 660 mW (military) EPROM technology 100% programmable

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

1531B

Abstract: 3AAG CY7C281A CY7C282A CY7C281A-45PC CY7C281A-45JC
Contextual Info: CY7C281A 7C282A CYPRESS Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

Contextual Info: — CY7C281 7C282 - :ï CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (m ilitary) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

d774

Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Contextual Info: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT

Contextual Info: CY7C281A 7C282A 'W C Y P R E S S Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

Contextual Info: CY7C281 7C282 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Highspeed — 30 ns commercial — 45 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

Contextual Info: CY7C281A 7C282A PRELIMINARY CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil or standard 600-mil DIP

7C281

Contextual Info: CY7C281 7C282 CYPRESS SEMICONDUCTOR 1024 x 8 PROM Features • C M O S for optimum sp eed / power • H igh speed — 30 ns comm ercial — 45 ns (m ilitary) • Low power — 495 mYV (com m ercial) — 660 mW (m ilitary) • E P R O M technology 100%

CY7C282-45DMB

Abstract: code eprom smd 7C282 CY7C281-45DC 7C26 c2814 CY7C281-30PC CY7C281
Contextual Info: SEMICONDUCTOR 4bE D • CMOS for optimum speed/power • H ighspeed — 30 ns commercial — 45 ns (military) • Low power — 495 mVV (commercial) — 660 mW (military) • EPROM technology 100% programmable • Slim 300-mil o r standard 600-mil DIP o r 28-pin LCC

CY7C281A-45JC

Abstract: C282A c282a2
Contextual Info: C Y7C 281A C Y7C 282A pyp: v « *1 X X - 1 K x 8 P R O M tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent program­

Contextual Info: CY7C281 7C282 CYPRESS SEMICONDUCTOR 1024 x 8 PROM Features • CM OS for optimum speed/ power • C ap a b le o f w ith stan d in g > 1500V s ta tic d ischarge • High speed — 30 ns commercial — 45 ns (military) Product Characteristics • Low power

Contextual Info: s CY7C281A 7C282A PRELIMINARY :.~ igs£= * CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 25 ns commercial — 30 ns (military) • Low power — 495 mW (commercial) — 660 mW (military) • EPROM technology 100% programmable

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

Contextual Info: W CY7C281A 7C282A ? C YPRESS Features • IK x 8 PROM C apable o f w ith stan d in g > 2001V static discharge • C M O S for optim um speed/pow er • High speed — 25 n s com m ercial Functional D escription — 30 n s (m ilitary) T h e C Y 7 C 2 8 IA an d C Y 7 C 2 8 2 A are