4407 MOSFET Search Results

STP4407

Abstract: mosfet 407 mosfet vgs 5v
Contextual Info: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

MOSFET 4407 a

Abstract: MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin TC4407 c4407 4407E 4407M TC4406
Contextual Info: leluom Semiconductor, Inc. TC4406 TC4407 3A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The T C 4406 and T C 4407 are CM O S buffer-drivers constructed with com plem entary M OS outputs, w here the drains of the totem -pole output have been left separated so

mosfet 4407 8pin

Abstract: MOSFET 4407 a MIC4606 MOSFET 4407 4407 mosfet MIC4607 1800pf IR 4607 MIC4606/4607
Contextual Info: MIC4606/4607 Micrel MIC4606/4607 Dual 3A-Peak Open-Drain MOSFET Driver Preliminary Information General Description Features The MIC4606 and MIC4607 are BiCMOS/DMOS bufferdrivers constructed with complementary MOS outputs, where the drains of the final output totem pole have been left

MOSFET 4407

Abstract: mosfet 4407 8pin MOSFET 4407 a 4407 mosfet 1800pf
Contextual Info: MIC4606/4607 Dual 3A-Peak Open-Drain MOSFET Driver Preliminary Information General Description Features The M IC4606 and MIC4607 are BiCMOS/DM OS bufferdrivers constructed with complem entary MOS outputs, where the drains of the final output totem pole have been left

MOSFET 4407

Abstract: MOSFET 4407 a irfu420 IRFR4209A IRFR420 TB334
Contextual Info: IRFR420, IRFU420 S e m iconductor Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

MOSFET 4407

Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
Contextual Info: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

MOSFET 4407

Abstract: irfu420 MOSFET 4407 a IRFR420 IRFR4209A TB334
Contextual Info: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

diode 222r

Abstract: MOSFET 4407 a circuit 4407
Contextual Info: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*

Contextual Info: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*

IC4606

Abstract: MIC4606 MIC4607 4606B 1800pf MIC4606AJ
Contextual Info: MIC4606/4607 3A Dual O pen-Drain M O SFET Driver Preliminary Information General Description Features The MIC4606 and MIC4607 are BiCMOS/DMOS bufferdrivers constructed with complem entary MOS outputs, where the drains of the final output totem pole have been left

MIC4606

Contextual Info: MIC4606/4607 3A Dual Open Drain Power Switches Preliminary Information General Description Features The MIC4606 and M IC4607 are BiCM O S/DM O S bufferdrivers constructed with com plem entary MOS outputs, where the drains of the final output totem pole have been left

Contextual Info: LTC1148 LTC1148-3.3/LTC1148-5 u r m TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ nTU R€ S D €SCRIPTIOn • Ultra-High Efficiency: Over 95% Possible ■ Current-Mode Operation for Excellent Line and Load Transient Response

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

LP 1610

Abstract: SCHEMATIC VGA board
Contextual Info: LH7A400 User’s Guide 2007 August 27 Content Revisions This document contains the following changes to content, causing it to differ from previous versions. Minor typographical changes, where they do not affect content, are not tracked here. Record of Revisions

Contextual Info: IMPORTANT NOTICE Dear customer, As from June 1st, 2007 NXP Semiconductors has acquired the LH7xxx ARM Microcontrollers from Sharp Microelectronics. The following changes are applicable to the attached data sheet. In data sheets where the previous Sharp or Sharp Corporation references remain, please use the new

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY