2SK10 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK1083-M

Abstract: 000201 A2126
Contextual Info: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance

s2e transistor

Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
Contextual Info: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer

oms 450

Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
Contextual Info: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance

5sV80

Abstract: A2138 00GE schematic symbol for n channel fet xldr 1088-M 088-M 2sk1
Contextual Info: 2SK1088-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary b reakdow n • Low driving p o w er • High fo rw a rd T ransconductance

2SK1036

Contextual Info: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o

2SK1006-01M

Abstract: 2sk mosfet
Contextual Info: 2SK1006-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High voltage

2SK1083-M

Contextual Info: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance

2SK1032

Abstract: 2SK1032A SC-65
Contextual Info: Power F-MOS FET 2SK1032, 2SK1032A 2SK1032, 2SK1032A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds, on : R ds ( o n ) = 1 . 3 f l (ty p .) Unit: mm • High sw itch in g r a te : t ( = 1 2 0 n s (ty p .)

2SJ167

Abstract: 2SK1061 2sk106
Contextual Info: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SK1093

Abstract: 2SK970
Contextual Info: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK1069

Abstract: 2SK771 2SK77
Contextual Info: Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1069] 0.425 • Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches,

Contextual Info: TOSHIBA 2SK1061 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 061 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4.2M AX NTERFACE APPLICATIONS Excellent Switching Times ton = 14ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)

Contextual Info: 2SK1094 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1098-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III S E R I E S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications

Contextual Info: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

Contextual Info: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

wt1e

Abstract: 2SK 93
Contextual Info: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

Hitachi 2SJ

Abstract: 2SK1058 J162
Contextual Info: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

NI3T

Abstract: te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent
Contextual Info: 2SK1020 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •Voss —± 30V Guarantee ■Applications

OAAI

Abstract: A2140
Contextual Info: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier