2sd526 equivalent
Contextual Info: 1.1. Maximum ratings of transistors ercised not to exceed any of the absolute m axi mum ratings, while taking into account fluctu ation of the supply voltage, deviation in prop erties of the electrical components, exceeding the maximum ratin g s while adjusting the c ir
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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o220abo-126j2y transistort15j10+8mp4704mg100m2ck12sb834mp3103mg50j6es91mp3002mp45052sc497
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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bce0016f2sa1941 amp circuit2sc33032sd880+7to3p package2sa114smd transistor h2a2sb834amplifier circuit using 2sa1943 and 2sc5200toshiba bipolar power transistoramplifier design tta1943
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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2N3055 TO220
Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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tip29btip30btip29ctip30c+16tip73btip74tip74atip74btip75tip75a2n3055 to220bd130npn transistor bd2413221 39002sa49bipolar transistor td tr ts tfmje350 equivalentse9302mje24822sc1419
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2SA1046
Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547 Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and
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2n6547case32tip73btip74+13tip74atip74btip75tip75atip75b2sa1046tip147 pwmbu108to218 20a darlingtonbu326bu100mj423motorola transistor 2n6547
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mj15003 equivalent
Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
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mj15003mj15004tip73btip74+12tip74atip74btip75tip75amj15003 equivalent2n3055 mj150032n3055bu108motorola mj15003bdx54bu326bu100
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2SC2246
Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,
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2n62822n62832n62842n6285+162n62862n6287tip73btip74tip74atip74b2sc22462sd669 equivalentrca1c03buw84bd875 equivalent2n6407bu1082n60262sd1178nsd134
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transistor 2SA1046
Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V
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tip33btip33ctip34btip34c+16tip73btip74tip74atip74btip75tip75atransistor 2sa10462sc106bd2622sc1419se93022n6107bd263st t4 3580ft48mje34 equivalent
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BU108
Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
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2n57452n43982n5758tip73b+11tip74tip74atip74btip75tip75atip75bbu1082sa1046bdx54bu326bu100
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BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd180bd179tip73btip74+13tip74atip74btip75tip75atip75bbu1082sd1816bdx54motorola mj3000mjd42c equivalentbu326bu1002n5631
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IR642
Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —
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2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
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2n6251tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa10462n3055bu108transistor k 3596bu326bu100tl mje2955tmje3055t2n31742sc936
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MJ2955 replacement
Abstract: BU108 2SA1046 MJE172 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in
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2n50382n5039tip73btip74+12tip74atip74btip75tip75atip75btip75cmj2955 replacementbu1082sa1046mje172bu326bu100
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BU108
Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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mje8503awatt32tip73btip74+11tip74atip74btip75tip75atip75bbu108bdt32sc19432sc1419bu326bu100
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TRANSISTOR BC 208
Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc
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mje3439tip73btip74tip74a+14tip74btip75tip75atip75btip75c2n6488transistor bc 2082n3055bu108mje3502sb527bdx54bu326bu100
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MJ4502 EQUIVALENT
Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A
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mj4502mj802tip73btip74+12tip74atip74btip75tip75atip75btip75cmj4502 equivalentbu108bu806 complementbdx54bu326bu100
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bd249c equivalent
Abstract: MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE
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tip47tip50mje5730mje5731+16mje5731atip73btip74tip74atip74btip75bd249c equivalentmj15003 300 watts amplifierbu108mje13009 equivalentbdx54bd139 equivalent transistormotorola case 77tip122 d-pak package2sb56bu326
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BU108
Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design
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equivalent transistor TIP3055
Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc
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tip3055tip2955tip73btip74+16tip74atip74btip75tip75atip75btip75cequivalent transistor tip3055bd4185bdw59bd139.10equivalent transistor tip2955tip2955 application notebd139.6bd139.162n3055 replacement2sc1237
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2SC1943
Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices
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MJE371 equivalent
Abstract: MJ13019 ST BDW83C BU108 transistor d 1557 mje521 equivalent transistor 2N6546 2N3713 MOTOROLA BDX36 equivalent IR-6062
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry
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mje371mje521tip73btip74+15tip74atip74btip75tip75atip75bmje371 equivalentmj13019st bdw83cbu108transistor d 1557mje521 equivalent transistor2n65462n3713 motorolabdx36 equivalentir-6062
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TIP48 NPN
Abstract: BU108 BU326 BU100 BD801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device
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