TIP30B Search Results

Contextual Info: TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29, 29 A, 29B, 29C TIP30, 30A, 30B, 30C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM MIN MAX A B C 14.42 9,63 3.56 16.51

c2688 L

Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
Contextual Info: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current

TIP29 RCA

Abstract: RCA TIP30
Contextual Info: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature

I8212

Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

Contextual Info: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.

TLP110

Abstract: tipi transistor SE9300 SE9302 darlington tip31 TIP105 Darlington transistor TIP41/TIP42 TLP117 SE9301 SE9400
Contextual Info: o Pow er T ran sisto rs TO-220 Case Continued TYPE NO. •c (A) MAX PNP NPN 10 SE9400 SE9300 SE9301 SE9401 10 SE9402 10 SE9302 1.0 TIP30 TIP29 TIP29A TIP30A 1.0 TIP30B 1.0 TIP29B 1.0 TIP29C TIP30C TIP32 TIP31 3.0 TIP31A TIP32A 3.0 TIP31B TIP32B 3.0 3.0 TIP32C

C2688

Abstract: c2688 transistor tRANSISTOR c2688 TIP308 tip30c TIP30A TIP29 TIP30 TIP30B TIP30D
Contextual Info: J . NS T K iO M TO > b5 D rja T b lT a b 8 9 6 1 7 2 6 TEXAS INSTR COPTO 62C D03b7SE 36752 J 3 ~ D / ? TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F P-N-P SILICON POWER TRANSISTORS J U L Y 1 9 6 8 - R EV ISED O CTO BE R 198 4 • Designed for Complementary Use With TIP29 series

tip30c

Abstract: TIP30 TIP30A TIP30B transistor equivalent book TIP30 TIP-30B 75Vce
Contextual Info: TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor Features • Complementary to TIP29/TIP29A/TIP29B/TIP29C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

NPN Transistor TO220 VCEO 80V 100V

Abstract: TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29
Contextual Info: TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

TIP418

Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A

tipxxx

Contextual Info: TIP29B, TIP29C, NPN , TIP30B, TIP30C, (PNP) Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ

TIP30

Abstract: tip30c TIP30B TIP30A TIP30 transistor Transistor tip29 TIP-30B
Contextual Info: TIP30 SERIES TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C

DATASHEET OF TRANSISTOR tip30

Abstract: tip30c TIP30 TIP30A TIP29 TIP30B
Contextual Info: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP29 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current B 1 ● 3 A Peak Collector Current C 2 ● Customer-Specified Selections Available

Contextual Info: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP29 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

0,1j 160v

Contextual Info: T E X A S J.NSTK iOMTO> 8 9 6 1 7 2 6 TEXAS INSTR COPTO '» . v* 62 C 3 6 7 5 2 D J 3 ~ / ? » *- TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F P-N-P SILICON POWER TRANSISTORS JU LY 1 9 68 - R E V ISE D OCTO BER 1984 • Designed for Complementary Use With TIP29 series

30BF

Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.

OF TRANSISTOR AT 30B

Abstract: OF TRANSISTOR tip30 tip30c
Contextual Info: TIP30 SERIES TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : TIP30 : TIP30A : TIP30B : TIP30C Collector Emitter Voltage : TIP30

TIP3I

Contextual Info: TIP30; A TIP30B; C PHILIPS INTERNATIONAL SbE ] • 7110flEb 0 0 4 3 4 b 0 5TS ■ P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. NPN complements areTlP29 series.

TIP29B

Contextual Info: ON Semiconductort NPN TIP29B Complementary Silicon Plastic Power Transistors TIP29C PNP . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. TIP30B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TIP30C

Contextual Info: TIP30 TIP30A TIP30B TIP30C SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP30 series devices are silicon PNP epitaxial-base power transistors designed for power amplifier and high speed switching applications.

Contextual Info: TIP30BF Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0

TIP29B

Abstract: TIP30B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30B

Contextual Info: TIP30; A TIP30B; C _ A SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in output stages of audio and television amplifier circuits where high peak powers can occur.NPN complements are TIP29 series.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29, 29A, 29B, 29C TIP30, 30A, 30B, 30C