TIP29B Search Results

Contextual Info: TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29, 29 A, 29B, 29C TIP30, 30A, 30B, 30C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM MIN MAX A B C 14.42 9,63 3.56 16.51

TP30C

Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B
Contextual Info: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30

tip29 equivalent

Contextual Info: Power Transistors TIP29, TIP29A, TIP29B, TIP29C H A RR IS S E M I C O N D S E CT OR 27E D 990 4 3 0 2 27 1 0 G 2 0 5 3 2 b • HAS File Number B Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors For P o w e r-A m p lifie r an d H ig h -S p e e d -S w itc h in g A p p licatio n s

c2688 L

Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
Contextual Info: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current

Contextual Info: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP30 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.

TLP110

Abstract: tipi transistor SE9300 SE9302 darlington tip31 TIP105 Darlington transistor TIP41/TIP42 TLP117 SE9301 SE9400
Contextual Info: o Pow er T ran sisto rs TO-220 Case Continued TYPE NO. •c (A) MAX PNP NPN 10 SE9400 SE9300 SE9301 SE9401 10 SE9402 10 SE9302 1.0 TIP30 TIP29 TIP29A TIP30A 1.0 TIP30B 1.0 TIP29B 1.0 TIP29C TIP30C TIP32 TIP31 3.0 TIP31A TIP32A 3.0 TIP31B TIP32B 3.0 3.0 TIP32C

TIP290

Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.

tip30c

Abstract: TIP30 TIP30A TIP30B transistor equivalent book TIP30 TIP-30B 75Vce
Contextual Info: TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor Features • Complementary to TIP29/TIP29A/TIP29B/TIP29C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

NPN Transistor TO220 VCEO 80V 100V

Abstract: TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29
Contextual Info: TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

TIP418

Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A

tipxxx

Contextual Info: TIP29B, TIP29C, NPN , TIP30B, TIP30C, (PNP) Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ

TIP29A

Abstract: TIP30B
Contextual Info: TYPIS TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS 3J CO H mC < FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C -0 r "v r rin > m tf l r> H h

TIP29F

Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
Contextual Info: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.

TIP30B

Abstract: 75322 tip3
Contextual Info: T Y P E S TIP3 0 , TIP 3 0 A . T IP 3 0 B , TIP3 0 C P -N -P S IN G LE -D IF F U S E D M E S A S IL IC O N P O W ER T R A N S IS T O R S 3 OH mC < •o r *o r pm > mw n hh m= = wZ w FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP29, TIP29A, TIP29B, TIP29C

MJE130076

Abstract: 2n6946 tipi transistor 2N6122 transistor TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A
Contextual Info: General Transistor Corporation GASE TO-220 IC M A X = Vceo(SUS> = 1-15A 30-400V POWER TRANSISTORS (V) DEVI CE TYPE DARLINGTON SWITCHING NPN PM> REsiSTTVESwrrc hi•9 1C MuVMu (A) la M u t»Mu (|1 » C ) 1 yes yes yes TIP29 TIP29A TIP29B TIP29C TIP47 TIP48

TIP29B

Contextual Info: ON Semiconductort NPN TIP29B Complementary Silicon Plastic Power Transistors TIP29C PNP . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. TIP30B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TIP30C

Contextual Info: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP30 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

Contextual Info: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •

TIP29B

Abstract: TIP30B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30B

Contextual Info: TIP29; 29A TIP29B; 29C _ J K. SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29, 29A, 29B, 29C TIP30, 30A, 30B, 30C

RCA-TIP29

Abstract: rcaTIP29 tip29a transistors TIP30 TIP29 RCA JIP29
Contextual Info: TIP29, TIP29A, TIP29B, TIP29C HARRIS SENICOND SECTOR File Number 5bE D • 990 4302271 0040*130 lb? « H A S Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors '7 ^ 3 3 - 0 ? For Power-Amplifier and High-Speed-Switching Applications Feature*: ■ ■ m ■

TIP29B

Abstract: TIP29 TIP29A TIP29C TIP30
Contextual Info: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current B 1 ● 3 A Peak Collector Current C 2 ● Customer-Specified Selections Available