BDT3 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE SSE D • 1,1,53=131 D O I U S S a ■ BD T29; 29A BD T29B; 29C r - 33 -07 SILICON EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BDT30 series.

Contextual Info: II, 25E N AMER PHILIPS/DISCRETE D • . Q O nbT? ~~' b ■ BDT32; A BDT32B; C r-33-17 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. They are intended fo r use in a wide range o f power amplifiers and for switching applications. The TIP32 series is an equivalent type. P-N-P complements

R3309

Abstract: 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF
Contextual Info: • ^53=131 OGlTbñi 7 BDT31F; 31AF BDT31BF; 31CF BDT31DF 2SE D N AMER PHILIPS/DISCRETE r - 3 3 - 0 7 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envGlope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

30DF

Abstract: BDT29BF 30BF BDT29AF BDT29CF BDT29DF BDT29F BDT30AF BDT30CF BDT30F
Contextual Info: • fcifesS3 ‘IBli 0 0 1 ^ 7 3 BDT30F BDT30AF; 30BF BDT30CF; 30DF 3 2SE D N AMER P H I L I P S / D I S C R E T E SILICON EPITAXIAL POWER TRANSISTORS T “" 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base,

ML2208CCJ

Contextual Info: MICRO LI NE AR bDT341fl DOQlflTM Sflb • ML S1E D October 1990 ”T * S I - 0 7 ¡ero Linear *O I p r e l im in a r y ML2200, ML2208 12-Bit Plus Sign Data Acquisition Peripheral GENERAL DESCRIPTION FEATURES Th e M L2200 and ML2Í208 Data Acquisition Peripherals D A P ,

transistor 31C

Abstract: BDT31 NPN Transistor VCEO 80V 100V BDT31A BDT31B BDT31C BDT32
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C

df transistor

Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF

NPN Transistor VCEO 80V 100V

Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF

Contextual Info: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

ML8464

Abstract: ML8464C
Contextual Info: MICRO EEE LINEAR D bDT341ö Q00073b 1 T - Ä - 3 3 - '/ Micro Linear ML8464B, ML8464C Pulse Detector GENERAL DESCRIPTION FEATURES The ML8464 is a Pulse Detector designed for use in magnetic disk applications to detect the amplitude peaks on the output of the read/write amplifier. These

Contextual Info: • ^53131 o a n b a i 7 N AMER PHILIPS/DISCRETE BDT31F; 31AF BDT31BF; 31CF BDT31DF 3SE D _ A r 3 3 - 0 7 - SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base.

BDT32

Abstract: BDT31 BDT32B TIP32 AAA01
Contextual Info: II, 25E D N AMER PHILIPS/DISCRETE • ' 1^ 5 3 ^ 31 Q Q l T b T ? b ■ '' BDT32; A BDT32B; C T - 3 3 -1 7 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plasticT0-220 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. The TIP32 series is an equivalent type. P-N-P complements

BDT31

Abstract: BDT31B BDT32 TIP31 T98-1
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 O G n b ö l - I I S ■ BDT31; A BDT31B; C r - 3 3 - ii SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and genera! am plifier and switching applications. The TIP31 series is an equivalent type, P-N-P complements are BDT32 series.

Contextual Info: N AMER PHILIPS/DISCRETE- hb53T31 QQllbtn? a • BDT30;A BDT30B;C 2SE D ■ T'33-lf SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The TIP 30 series is an equivalent type.

vr182

Abstract: BDT29 BDT30 BDT30A BDT30B
Contextual Info: ri N AMER PH ILI P S/ DI SC RE T E- bbS3ia 1 O d l U b ? a • BDT30;A BDT30B;C SSE D J T-33-/7 SILICON EPITAXIAL BASE POWER TRANSISTORS -P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The T IP 3 0 series is an equivalent type

PNP 100V 2A

Abstract: BDT30 BDT30A BDT30B BDT30C
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C

Contextual Info: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.

Contextual Info: • 25E D N AMER PHILIPS/DISCRETE bb53T31 OQnbfil 2 ■ BDT31; A BDT31B; C T '- S 3 - II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. The TIP31 series is an equivalent type. P-N-P complements are BDT32 series.

BR203

Abstract: BDT31 BDT31B BDT32 TIP31
Contextual Info: N AMER P H IL IP S /D IS C R E T E 25E D • bbS3T31 Q O l^bfil 2 ■ BDT31; A BDT31B; C "T - S 3 - II SILICON EPITAXIAL BASE POW ER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. The TIP31 series is an equivalent type, P-N-P complements are B D T 3 2 series.

Contextual Info: A p ril 1989 PRELIM IN ARY Micro Linear ML511, ML511 R-Series 4, 6, 7f or 8-Channel Ferrite Read /Write Circuits GENERAL DESCRIPTION FEATURES The ML511 is a bipolar monolithic read/w rite circuit designed for use with center-tapped ferrite recording heads. The

Contextual Info: March 1997 MÉLMicro Linear ML6622 High-Speed Data Quantizer GENERAL DESCRIPTION FEATURES The ML6622 high-speed data quantizer post-amplifier is a low noise, wide-band, BiCM OS monolithic 1C designed for high-speed signal recovery applications, such as FD D I,

Contextual Info: April 1994 Preliminary Micro Linear ML4420 Enhanced Sensortess BLDC Motor Controller GENERAL DESCRIPTION The start-up algorithm consists of measuring a fixed VCO frequency and externally ramping the commutation clock until it is equal to the VCO frequency. The timing of the

Contextual Info: Septem ber 1994 Micro Linear ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES Th e M L4 8 1 2 is designed to o p tim ally facilitate a "boost" type pow er factor correction system . Special care has been taken in the design of the M L 4 8 1 2 to increase

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable