LBS3T31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

transistor BUZ20

Abstract: OC106 BUZ20 OC-106 toc106
Contextual Info: P n w p r M O S tr a n s is to r N AMER PHILIPS/DISCRETE _ BUZ20_ ObE D • LbS3T31 ODlMMlb 5 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: i NPHILIPS/DISCRETE OLE D 86D 0 1 1 2 6 • D T -3 3 -/3 LbS3T31 00133L4 4 BLU52 A V.H.F./U.H.F. PUSH-PULL POW ER TRAN SISTO R N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 M H z range.

Contextual Info: PowerMOS transistor_ F AMER PHILIPS/DISCRETE BUZ31 DbE D • LbS3T31 0014444 ~1 ■ rsi-n May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor c 6073

Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
Contextual Info: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures

Contextual Info: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.

BUK444-400B

Contextual Info: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in

SOT128

Abstract: BFQ235A BFQ255A BFQ235 BFQ25 BFQ255
Contextual Info: Philips Semiconductors M LbS3T31 0 Q 3 1 7 45 2m PNP 1 GHz video transistors HAPX ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES fc^E ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product

Contextual Info: Philips Components BDV66AF/66BF/66CF/66DF D a ta s h e e t statu s Product specification d a te of issue December 1990 PNP Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages

Contextual Info: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

Contextual Info: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

CBC 184 transistor

Abstract: S 354 OPTOCOUPLER CNX35U CNX36U CNX39U
Contextual Info: CNX35U CNX36U CNX39U T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • •

PROXIMITY inductive ic

Abstract: metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P
Contextual Info: N AUER P H IL IP S / DI SC R ET E b^E D m bb53T31 D03EB01 BAPX Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM31Q5P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.

BUZ54

Contextual Info: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

Contextual Info: N AMER PHILIPS/DISCRETE bb53T31 0011553 7 ObE » BYV19 SERIES T-03-17 SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220AC plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are

Contextual Info: _ L!_ _ _ _ _ _ _ _— N AMER PHILIPS/DISCRETE bbSBTBl 0011243 4 • OLE D BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward

Contextual Info: N AMER PHILIPS/DISCRETE • ObE D i i_ bb53=131 0014=163 4 ■ LUE2003S LU E2009S -K-1Z-OS MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

Contextual Info: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

diode marking code YF

Abstract: BF992 bf992 m92
Contextual Info: • bts3T3i oo23bia an ■ apx BF992 N AUER P H I L I P S / D I S C R E T E b7E D SILICO N N-CHANNEL DUAL GATE M O S-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in v.h.f. applications, such as v.h.f.

Contextual Info: •I bbS3T31 QQSSMTfl STM « A P X N AMER PHIL IPS /DISCR ETE BSP108 b7E _y \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended

Contextual Info: _ y v _ BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio output stages and general amplifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95.

Contextual Info: N AMER PHILIPS/DISCRETE — DbE D ~ • bb53l31 001573b 3 ■ I BF767 _ A_ T -3 I- IS SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope, primarily intended for application as gain con­ trolled amplifier e.g. in v.h.f. and u.h.f. television tuners in thick and thin-film circuits.