Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    D014717 Search Results

    D014717 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUZ54

    Contextual Info: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		buz54bhs3t31d014717jbuz54+1t-39-13 PDF

    D1407

    Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
    Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance


    OCR Scan     		buz54_bfa53131buz54t-39-13+4d1407t03 package transistor pin dimensionsmc 140 transistor2sc406 PDF

    D01471

    Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung


    OCR Scan     		m536256w/wg256kx36kmm536256wm536256w+740-pin72-pin22fifkmm536256w-7130nskmm536256w-8d01471 PDF