SOT128 Search Results

Contextual Info: Package outline Plastic single-ended multi-chip package; 6 interconnections; 3 in-line leads SOT1288 E section A-A HE1 B 1 , r L1 C center of reading point K1 0.2 B 0.2 C (1), r bp1 Q D L (1) (1) HE D1 A A pin 1 index A (1) L2 0.4 B b e Q K2 HE2 5 b bp1 c

SOT128

Abstract: BFQ262 BFQ265 BFQ268 X3A-BFQ268
Contextual Info: bb53^31 Philips Sem iconductors 0032211 Em ^BAPX Product specification NPN 1 GHz video transistor crystal X3A-BFQ268 b^E T> N AMER P H I L I P S / D I S C RE TE DESCRIPTION M ECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SO T172). Crystals are supplied

npn transistors, video amplifiers

Abstract: ph2369 BFV421 1024 transistor BFV469 BFV420 BFQ235A BFQ252 cascode BFQ251
Contextual Info: Philips Semiconductors Video Transistors and Modules for Monitors Line-ups WIDEBAND TRANSISTORS FOR VIDEO OUTPUT AMPLIFIERS IN MONITORS - DEVICE USAGE IC max. mA SOT54 (TO-92) SOT32 (TO-126) SOT128B (TO-202) SOT223 150 BFQ131 − − BFG35 500 BFQ161 BFQ162

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110fl2b OGMbldl 7fl3 • P H I N SbE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

BFQ235A

Contextual Info: Philips Semiconductors Product specification PNP video transistors BFQ255; BFQ255A FEATURES DESCRIPTION • High breakdown voltages PNP video transistor in a SOT128B T0-202 plastic package. NPN compléments: BFQ235 and BFQ235A. • Low output capacitance

Contextual Info: CF P1 5 PMEG045V100EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 4 July 2014 Preliminary data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power

mbgs

Abstract: BFQ245
Contextual Info: Philips Semiconductors Product specification PNP video transistor BFQ245 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 3-lead plastic SOT128B package.

Contextual Info: CF P1 5 PMEG045V150EPD 45 V, 15 A low VF MEGA Schottky barrier rectifier 4 July 2014 Preliminary data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power

Contextual Info: Package outline Plastic single-ended leaded through hole package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) E1 SOT128B c1 P P1 HE D L1 L2 L 1 2 3 bp c w M Q e1 A e E 5 10 mm scale DIMENSIONS (mm are the original dimensions)

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of CFP15 package SOT1289 4.6 3.63 1.4 2x 1.7 (2x) 1.5 (2x) 2.13 1.54 1.34 1.24 0.6 0.4 0.11 1.9 7.3 0.97 5.06 4.86 0.2 1.9 0.2 occupied area solder resist solder lands solder paste Issue date

BF0232

Abstract: SOT128 X3A-BFQ234 BFQ232 BFQ235 BFQ236
Contextual Info: P h ilip s Sem icon du ctors P rodu ct specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ234 SbE D D ESCRIPTION 711Ga2b □Ü4 b 0 licî 2T5 IPHIN M E C H A N IC A L DATA N PN crystal used In BFQ232 A (SOT32), BFQ235(A) (SOT128) and BFQ236(A) (SOT223). Crystals are

Contextual Info: CF P1 5 PMEG45U10EPD 45 V, 10 A extremely low VF MEGA Schottky barrier rectifier 16 April 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1289 (CFP15) power

BFQ262

Abstract: BFQ265 BFQ268 X3A-BFQ268 SOT128 SOT172 crystal PHILIPS
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110021, OQMblDl 7fl3 SbE D DESCRIPTION IPHIN MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

Contextual Info: bbS 3T31 Philips Semiconductors 0032211 2H1 ^ l A P X Product specification NPN 1 GHz video transistor crystal — N X3A-BFQ268 AMER PHILIPS/DISCRETE DESCRIPTION fc^E 1 MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

Contextual Info: CF P1 5 PMEG045V050EPD 45 V, 5 A low VF MEGA Schottky barrier rectifier 3 July 2014 Preliminary data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power

TO-202AA

Abstract: TO202AA SOT128 SC53
Contextual Info: PDF: 1999 Sep 14 Philips Semiconductors Package outline Plastic single-ended leaded through hole package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) SOT128B E1 c1 P P1 HE D L1 L2 L 1 2 3 bp c w M Q e1 A e E 5 10 mm scale

Contextual Info: CF P1 5 PMEG45A10EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 16 April 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1289 (CFP15) power

Contextual Info: Package outline CFP15: plastic, thermal enhanced ultra thin SMD package; 3 leads; body: 5.8 x 4.3 x 0.78 mm SOT1289 b b2 2x b1 3 L 2 e L1 L2 1 (2x) b3 (2x) b3 D1 E C A D 1 3 2 2.5 Dimensions (mm are the original dimensions) Unit A max nom 0.78 min mm C D

Contextual Info: Package outline Plastic single-ended multi-chip package; 6 interconnections; 3 in-line leads SOT1288-2 E section A-A HE1 B 1 , r L1 C center of reading point K1 0.2 B 0.2 C (1), r bp1 Q D D2(2) L (1) (1), r (1), r (1) HE D1 A A pin 1 index A (1) L2 0.4 B

711Gfl2b

Abstract: IEC134 BFQ295 BFQ296
Contextual Info: Philips Semiconductors Preliminary specification NPN HDTV video transistor philips BFQ296 ShE T> international FEATURES 711Gfl2b 0G4Sb7fl D7T « P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product

AgCu28

Contextual Info: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors

BFQ245

Abstract: SC05 MBG510
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ245 PNP video transistor Product specification Supersedes data of 1995 Oct 09 File under Discrete Semiconductors, SC05 1996 Sep 04 Philips Semiconductors Product specification PNP video transistor BFQ245 APPLICATIONS • Primarily intended for cascode

BF585

Abstract: BF587 BF588 BP317 sot128b
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES

str 6707

Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.