HB53T31 Search Results

Contextual Info: hb53T31 0D2372h a7b APX iN AUER PHILIPS/DISCRETE b7E D • N-channel enhancement mode vertical D-MOS transistor Philips Semiconductors Product specification BS108 QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT 200 V

Contextual Info: N AMER PHILIPS/DISCRETE- hb53T31 QQllbtn? a • BDT30;A BDT30B;C 2SE D ■ T'33-lf SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The TIP 30 series is an equivalent type.

Contextual Info: N AUER PHILIPS/DISCRETE hb53T31 0033Sb3 Q • SSE D BYV32F SERIES T -Q 3 -/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

BLw76a

Abstract: BLW76 BD433 74412
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

K 3699 transistor

Abstract: BLY88A 3699 npn pscw
Contextual Info: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

BUZ54

Contextual Info: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.

DIODE m1

Abstract: m3062 BYQ27
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE D • b b S B T B l 'oQSeaflS H M I - BYQ27 SERIES JL 7 T Q 3 -/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

BLX67

Abstract: mrtil transistor 3568
Contextual Info: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,

OM320

Abstract: OM-320 D1N4500 QM320 tTR21 philips MATV amplifiers philips hybrid stk power amplifiers DIN45004 max2810
Contextual Info: li N AMER PHILIPS/DISCRETE 2SE D • bfc.53T31 0018303 0 ■ 11 O M 320 T - W - O l - O HYBRID VH F/U H F W IDE-BAND AMPLIFIER Tw o-stage wide-band am plifier in the hybrid technique, designed for use in m ast-head booster am p lifiers, a s p re-am p lifier in MATV system s, and as general-purpose am pli­

BAW56W

Abstract: d 132 smd diode
Contextual Info: N AflER PHILIPS/DISCRETE bTE D bb53=J31 □OSt.'ì'ì? QbT « A P X Philips Semiconductors Product specification S ilico n p lan ar epitaxial h ig h -s p e ed d o u b le d io de FEATURES • P lastic S M D envelope • High sw itch ing speed • G eneral application.

BSS60

Abstract: BSS50 BSS61 BSS62
Contextual Info: I I N AMER PHILIPS/DISCRETE b^E D • 1^53^31 □□E7flb4 b2T I APX E3SS60 to 62 A P-N-P DARLINGTON TRANSISTORS S ilicon planar transistors in TO -39 m etal envelopes, intended fo r industrial sw itch in g a p p lications e.g. p rin t ham m er, solenoid, relay and lamp driving.

BYV54-100

Abstract: T03A M3029 BYV54V IEC134 M3031 TERMINAL M4 BYV5
Contextual Info: N AMER PH ILIPS/DI SCRE TE DEVELOPMENT DATA SSE D • I1 b b 5 3 T 3 1 0GH2ta03 fl ■ BYV54V SERIES T h is d a ta sheet c o n ta in s advance in fo r m a tio n and s p e c ific a tio n s are su b je c t to change w it h o u t n o tic e . v_

BTV58-600R

Abstract: transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt
Contextual Info: N ÂtTeR P H I L I P S / D I S C R E T E DkE D • fab53T31 O O l l ô 1^ I _ T m BTV58 SERIES _/ I s~ FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. Thev are

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bb53131 0 0 2 0 ^ 0 T ■ PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK437-400A

Abstract: BUK437-400B
Contextual Info: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: DEVELOPMENT DATA BR211 SERIES This data sheet contains advance information and specifications are subject to change without notice. SSE D • 7Z2ST~O S‘ ^ 5 3 1 3 1 0023255 0 ■ N AMER PHILIPS/DISCRETE BREAKOVER DIODES A range o f bidirectional diodes in hermetically sealed axial-leaded implosion-diode glass outlines w ith a

BDX66

Abstract: transistor bdx66 BDX66B TRANSISTOR BDX67 12697 transistor 66a BDX66B BDX66A BDX66 BDX66B BDX66 Darlington BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66
Contextual Info: N AMER PHILIPS/DISCRETE ESE D • ^53^31 DOrnñ? '' 4 ■ BDX66; 66A . BDX66B; 66C T - Z Z - 3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,