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    BDX66B Search Results

    BDX66B Datasheets (16)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDX66B
    Comset Semiconductors PNP SILICON DARLINGTON Original PDF 165.5KB 4
    BDX66B
    Philips Semiconductors Silicon Darlington Power Transistors Original PDF 284.5KB 10
    BDX66B
    Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original PDF 10.99KB 1
    BDX66B
    Mullard Quick Reference Guide 1977/78 Scan PDF 435.7KB 16
    BDX66B
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 53.68KB 1
    BDX66B
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 160.19KB 1
    BDX66B
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 161.81KB 1
    BDX66B
    Unknown Cross Reference Datasheet Scan PDF 39.51KB 1
    BDX66B
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 72.63KB 1
    BDX66B
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.19KB 1
    BDX66B
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.18KB 1
    BDX66B
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 87.57KB 1
    BDX66B
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.55KB 1
    BDX66B
    Semelab Silicon Darlington Power Transistor Scan PDF 359.47KB 10
    BDX66B
    Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF 45.63KB 1
    BDX66BB
    Unknown Transistor Replacements Scan PDF 49.19KB 1

    BDX66B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BDX66B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    bdx66bo204aa16-jul-02 PDF

    BDX66B

    Abstract: BDX66
    Contextual Info: SavantIC Semiconductor Product Specification BDX66B Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High current ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching applications. PINNING See Fig.2 PIN DESCRIPTION 1


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    bdx66b-40mabdx66 PDF

    BDX66B

    Contextual Info: BDX66B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    bdx66bo204aa31-jul-02 PDF

    BDX71

    Abstract: BDY10 BDX74 I/BDX72 BDX84 BDX67 BDX72 BDx77 BDX86C BDX66B
    Contextual Info: SEMELAB LTD 37E ]> • Q00DD47 b ■ SMLB 7~-3 3 -01 type No. optlonll,y PolaritV BDX66B BDX66C BDX67 BDX67A BDX67B SCREEN SCREEN CECC CECC CECC PNP PNP NPN NPN NPN BDX67C BDX70 BDX71 BDX72 BDX73 HI-REL NPN NPN NPN NPN NPN Package V C E 0 * * * * ^ hF E @


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    fll331fl0000d47bdx66bbdx66c+14bdx67bdx67abdx67bbdx67cbdx70t0220bdx71bdy10bdx74i/bdx72bdx84bdx72bdx77bdx86c PDF

    Contextual Info: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 • BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,


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    bdx66bdx66bbdx67bdx67a+3bdx67bbdx67ct-33-37 PDF

    Contextual Info: BDX66B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    bdx66bo204aa18-jun-02 PDF

    BDY11

    Abstract: BDY23 BDX65C
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC


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    bdx20bdx27bdx28bdx29+9bdx30bdx30-10bdx30-6bdx62bdx62abdx62bbdy11bdy23bdx65c PDF

    BDX66

    Abstract: transistor bdx66 BDX66B TRANSISTOR BDX67 12697 transistor 66a BDX66B BDX66A BDX66 BDX66B BDX66 Darlington BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66
    Contextual Info: N AMER PHILIPS/DISCRETE ESE D • ^53^31 DOrnñ? '' 4 ■ BDX66; 66A . BDX66B; 66C T - Z Z - 3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,


    OCR Scan
    bdx66bdx66bt-zz-31bdx67+10bdx67abdx67bbdx67ctransistor bdx66bdx66b transistor12697transistor 66abdx66b bdx66a bdx66bdx66 darlingtonbdx67c bdx67b bdx67a bdx67 bdx66b bdx66a bdx66 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
    Contextual Info: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


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    bdx66bdx66abdx66bbdx66c+2bdx66b bdx66a bdx66c22b PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046 PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8 PDF

    Contextual Info: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


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    bdx66-100v-120vo-204aa PDF

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
    Contextual Info: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage


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    bdx66bdx66abdx66bbdx66c+2bdx66b bdx66a bdx66bdx 66 a PDF

    bdx67

    Abstract: transistor bdx67
    Contextual Info: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3> 1 Q O nW 7 • BDX67; 67A BDX67B; 67C T -3 3 -3 .7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,


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    bdx67bdx67bbdx66bdx66a+5bdx66bbdx66ctemperabb53t31t-33-29transistor bdx67 PDF

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


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    ecg10ecg11ecg12ecg13+16ecg14ecg15ecg16ecg17ecg18ecg19lm1011njrc386dx0238ceua78gkcm51725lmj13005an6677ha11749mn8303sn76131n PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    BDX67

    Abstract: transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66 darlington power transistor 10a BDX66A BDX66B BDX66C
    Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bt.53^31 D G l T n ? 7 ■ BDX67; 67A BDX67B; 67C T-33-H7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for aûdio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,


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    bdx67bdx67bt-33-hbdx66+7bdx66abdx66bbdx66ctransistor bdx67bdx66b bdx66a bdx66bdx66b transistordarlington power transistor 10a PDF

    jrc386d

    Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
    Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50


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    ecg10ecg11ecg12ecg13+16ecg14ecg15ecg16ecg17ecg18ecg19jrc386dsn76131nlm1011nne545bha1457wx0238ceupc1018cua78gkcmj13005mn8303 PDF

    transistor bdx66

    Abstract: BDX66B TRANSISTOR BDX66 BDX66C BDX66B BDX66A BDX66 BDX66A BDX66C Transistor Audio Output Transistor Amplifier BDX67 data transistor darlington for High Power Audio
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000 Min @ IC= -10A ·Complement to Type BDX67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


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    bdx67/a/b/cbdx66bdx66bbdx66a+8bdx66ctransistor bdx66bdx66b transistorbdx66b bdx66a bdx66bdx66c transistoraudio output transistor amplifierbdx67data transistor darlington for high power audio PDF

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk522sc4977mje102bd6992sa1046bu808dfi equivalent2n3055 replacementmj2955 replacementbuh513 PDF

    Contextual Info: 4ÖE D • 0133107 00GG44T 5EMELABI 7Ö7 ■ SMLB n LT]> T.a.?.et BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code HR HR HR HR HR HR HR HR CECC CECC CECC HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR HR CECC CECC CECC


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    00gg44tbdx65bdx65abdx65b+6bdx65cbdx66bdx66abdx66bbdx66cbdx67 PDF

    BDX67

    Abstract: transistor bdx66 BDX66B HC10A BDX66 BDX67C transistor NES BDX66A BDX66C BDX67A
    Contextual Info: SEMELAB LIMITED J^e>x oloC 2 iûOH.Ci(o. SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,


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    bdx67bdx67abdx67bbdx67c+8bdx667z57s01transistor bdx66bdx66bhc10atransistor nesbdx66abdx66c PDF