FLL331FL Search Results

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

transistor 800V 1A

Contextual Info: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications

Bc177a

Contextual Info: 37E D SEMELAB LTD fll331fl7 DDD0031 5 ISMLB - y - X J - 01 — type No. Package Vc e o •c cont hFEc PD V c e /'C B C1 0 7 BC107A BC107B BC108 BC108A SCRE E N SCREEN SCREEN SCRE E N SCREEN NPN NPN NPN NPN NPN T018 T018 T018 T018 T018 45 45 45 20 20 0.1 0.1

Contextual Info: bOE D “ • fll331fl7 DDQO'lbb 370 ■ SMLB SENELAB PLC '^T'3V'¿ó SEMELAB D2004UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 10W -28V -1G H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2

BUL52A

Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Contextual Info: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN

sml752r4gn

Contextual Info: S E ME LA B _ m PL C bGE D fll331fl7 D D D G Ô M t bTl • S M L B i = MOS POWER I M 4 T~-'3>°i - \3 SEME “ ■ I - 800V 750V 800V 750V SML802R4GN SML752R4GN SML802R8GN SML752R8GN LAB 2.4012 2.4012 2.8012 2.8012 4.3A 4.3A 4.0A 4.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

4040BN

Abstract: 4030BN sml3530bn SML4030BN SML4040BN
Contextual Info: SENELAB PLC bOE D fll331fl7 OOOGblb GTE Mil ISMLB MOS POW ER d I 3 °i-is ' SEME SML4030BN SML3530BN SML4040BN SML3540BN LAB 400V 350V 400V 350V 0.3012 0.3012 0.4012 0.40Q 18.5A 18.5A 16.0A 16.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

BSW66

Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
Contextual Info: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73

BD267

Contextual Info: SEMELAB LTD 37E I fll331fl? 0000040 3 • S d L B I - 3 3 - 6 1 ^ 1 i tj j ■type No. SST' Package V q e o . cont ^FE VCE/>C PD BD262B BD263A BD263B BD266 BD267 PNP NPN NPN PNP NPN T0126 T0126 T0126 T0220 T0220 100 100 120 60 60 4 4 4 8 8 750rain 750min

ba606

Abstract: BU500
Contextual Info: S E N E LA B LTD 37E D fll331fl7 D D Ü 0 0 S 4 3 • S f l L B «'¡I { t ¿S ÍÉ £ á U & 3 ft fc a n ¿^ ¡£ U 3 t t H fií¿á Type No. Option"*^ Polarlty Paoka9e V CEO ¡ £ nt cont hF E @ VCE/>C Pd BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN

HT1 npn

Contextual Info: SENELAB LTD 37E D fll331fl7 000DD44 0 .'-'H JU . Ht.1. j U' \\\/'yv TV peN o. ? O p t io n 1'*7 Polarl,y Packa9 e VC e o ¡ £ n, hF E @ /¿.-V : PD V C E /IC BDS10 BDS11 BDS12 BDS13 BDS14 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP TO220M T0220M

BUX28

Contextual Info: 37E » SENELAB LTD fll331fl7 □□□□□57 =| • S M L B SEMELABI ty p e No. B UW58 BOW6 4 A BUW6 4 B BUW64B BUW70 BUW71 BUW72 BUW73 BUW74 BUW75 BUW76 BUW77 BOW81 BUW8 1 A BUW85 Reliability Option S C REEN SCREEN SCREEN SCREEN S C REEN SC REEN SC REEN

2N4033

Abstract: 2n4026
Contextual Info: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028

BUP38

Abstract: LE17
Contextual Info: - SEMELAB 37E LTD Û1331Û7 D Q0QQ14M ISMLB •1 S E M E LA B JUN 2 6 1987 4 'S m g - i , 4Î T - 3 3-13 -• 1 BUP38 SILICO N N P N MECHANICAL DATA EPITAXIAL PLANAR FEATURES =j—r T 12.7 21 • High breakdown voltage imi • Wide area of secondary breakdown

s34 schottky diode

Abstract: SB3009 sb30-09 s34 schottky s34 DIODE schottky SOT93M
Contextual Info: 4ÔE D Ô1331Û7 ÜDDD4S1 bTfl 5EMELABI SENELAB SCHOTTKY BARRIER DIODES 3 LTD ' l MECHANICAL DATA Dimensions in mm New Product In response to the significant demand for High Voltage Schottky Barrier Rectifier Diodes for use in Advanced Power Supplies and DC/DC Converters, SEMELAB

Contextual Info: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE *— _2.0 3.5 r ^ * ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5

BFC11

Contextual Info: lili i t t i lili SEME BFC11 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches 11 8 (0 4 6 3 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS } I D(cont) 800V 27A ^DS(on) 0.30Q 'DSS Terminal 1 Terminal 3 Source 2* Gate

Contextual Info: SEMELAB 37E D LTD JUL 0 6 1988 • Ô1331Ô7 DGODlfiM 5 SEMELAB BUV42A NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M E C H A N IC A L D A T A D im e nsion s in mm

Contextual Info: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES

BFC52

Contextual Info: mi BFC52 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 -A D Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 208) 1 49 (0 OS» a — 4 ubÿoT IN £ i * i 1 ! ! ^ ; I 1 0 40 (D 016) 1 01 |0 040) 1 40 (0 055)

LM 4585

Abstract: sml451r1gn
Contextual Info: SEP1ELAB PLC 0133107 t>OE D000Ô3Ô INI 525 •SMLB ä MOS POWER -13 SML5085GN SML4585GN SEME LAB 500V 450V 500V 450V SML501R1GN SML451R1GN 0.8512 7.0A 7.0A 0.85Q 1.1 on 1.1 on 6.5A 6.5A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: SEMELAB PLC_ bOE D • Ö1331Ö7 □□□OLbä = rr= 4T0 ■ SMLB MOS POWER 4 “ im “ SEME LAB SML1004R2KN 1000V 3.5A 4.20 Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 2 5 °C unless otherwise specified.

Contextual Info: mi WM8030 SEME LAB QUAD 8 BIT DAC FEATURES • • • • • • • • • • • Four 8 bit D to A converters Guaranteed Monotonicity 3V to 10V operation Microprocessor, TTL, CMOS compatible 4 Separate voltage reference inputs High impedance reference voltage inputs

Contextual Info: SEMELAB LTD 37E tfOÖ D 0133107 □ □□024*1 7 • SEM ELAB W BUZ 35 M O S POW ER M EC H A N IC A L DATA N-Channel Enhancem ent M o d e Dimensions in mm APPLICATIONS • DC/DC CONVERTERS • C O M M U N ICA TIO N S EQUIPMENT • M EA SU R IN G & C O N TR O L