APT4030BN
Abstract: APT 4030BN APT4040BN 4030BN APT3530BN
Contextual Info: A d van ced P o w er Te c h n o l o g y c O D APT4030BN 3530BN APT4040BN APT3540BN O s POWER MOS IV 400V 350V 400V 350V 18.5 A 18.5 A 16.0A 16.0A 0.30Q 0.3012 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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apt4030bnapt3530bnapt4040bnapt3540bn+73530bn4030bn3540bn4040bnapt4030/3530/4040/3540bno-247adapt 4030bn
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4030BN
Abstract: apt4030bn t4030 APT 4030BN
Contextual Info: ADVANCED POW ER Te c h n o l o g y O D APT4030BN 3530BN APT4040BN APT3540BN Ô s POWER MOS IVe 400V 350V 400V 350V 0.3012 0.300 0.40Q 0.4012 18.5A 18.5A 16.0A 16.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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apt4030bnapt3530bnapt4040bnapt3540bn+83530bn4030bn3540bn4040bno-247adqqg14b3t4030apt 4030bn
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4040BN
Abstract: 4030BN sml3530bn SML4030BN SML4040BN
Contextual Info: SENELAB PLC bOE D fll331fl7 OOOGblb GTE Mil ISMLB MOS POW ER d I 3 °i-is ' SEME SML4030BN 3530BN SML4040BN SML3540BN LAB 400V 350V 400V 350V 0.3012 0.3012 0.4012 0.40Q 18.5A 18.5A 16.0A 16.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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fll331fl7sml4030bnsml3530bnsml4040bn+6sml3540bn3530bn4030bn3540bn4040bno-247ad
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diode RP 4040
Abstract: APT4040B APT4030 j0501
Contextual Info: ADVANCED POW ER Te c h n o l o g y q O D r APT4030BN 3530BN APT4040BN APT3540BN Ô S ¡5 WER MOS m 400V 350V 400V 350V 18.5A 18.5A 16.0A 16.0A 0.300 0.30Q 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.
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apt4030bnapt3530bnapt4040bnapt3540bn+103530bn4030bn3540bn4040bnapt4030/3530/4040/3540bnapt4030/4040bndiode rp 4040apt4040bapt4030j0501
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