LM 4585
Abstract: sml451r1gn
Contextual Info: SEP1ELAB PLC 0133107 t>OE D000Ô3Ô INI 525 •SMLB ä MOS POWER -13 SML5085GN SML4585GN SEME LAB 500V 450V 500V 450V SML501R1GN SML451R1GN 0.8512 7.0A 7.0A 0.85Q 1.1 on 1.1 on 6.5A 6.5A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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sml5085gnsml4585gnsml501r1gnsml451r1gn+65085gn451r1gn501r1gn4585gno-257aalm 4585
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SML5040BN
Abstract: SML6015LVR sml40m70wvr sml5019hvr SML5020AVR T0267
Contextual Info: SEMELAB pic Type_No SML4025BN SML4025HN SML4030AN SML4030BN SML4030CN SML4030CNR SML4040AN SML4040BN SML4040CN SML4065AN SML4065BN SML4065CN SML4065GN SML4080AN SML4080BN SML4080CN SML4080GN SML40M35JVR SML40M35MVR SML40M42BFN SML40M70JVR SML40M70LVR SML40M70WVR
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sml4025bnsml4025hnsml4030ansml4030bn+12sml4030cnsml4030cnrsml4040ansml4040bnsml4040cnsml4065ansml5040bnsml6015lvrsml40m70wvrsml5019hvrsml5020avrt0267
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sml20m40bfn
Abstract: L8030
Contextual Info: im i^i llll Sem elab Power M anagem ent Division 4 GENERATION HERMETIC POWER MOSFETS Package b v dss R d s ON PD W atts Q g(n C ) O hm s lD(Cont.) Am ps Ciss(pF) Volts (Typ) (Typ) 0.260 36.0 830 11560 454 SM L10026DFN 0.500 22.0 595 5560 227 SM L10050CFN
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l10026dfnl10050cfnsml1001r1anl1001r1hn+7sml1001l1002ranl1002rcnl1002r4anl1002r4cnsml20m40bfnl8030
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2c4152c4252c4442c746+162n1131l2n11322n1132csm2n1132dcsm2n12082n1209diode 400v 5alm1083bzy55ctransistor 2n1208bc109 spiceirf9024cv7404mnt6337jsml1258sml1004rgn
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lm3i7
Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
Contextual Info: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24
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in4001csmuin4003csmd60dcsm222ia+162n2221dcsm2n2222adcsm2n2222dcsm2n2369adcsm2n2453d2n2639dcsmlm3i7bfd22ic lm7812lm3i7-220mlti086pi38a2n3904dlm7924bfd48byvi43-35m
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