2SC3070 Search Results

J600 transistor

Abstract: transistor J600 2SC3070 VEBO-15V
Contextual Info: Ordering number: EN 923G _ 2SC3070 No.923G NPN Epitaxial Planar Silicon Transistor High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hpE=800 to 3200}

2SC3070

Abstract: VEBO-15V transistor 9232
Contextual Info: Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low-frequency, general-purpose amplifier., various drivers, muting circuit. unit:mm 2006A

H7 RF

Abstract: 2SC4012 2SC3070 2SC3078M W378
Contextual Info: ROHM CO LTD ~ 4 QE D ? 0 2 flW h 7 > V ^ ^ / T ransistors DDDSTMl T BRHN 2S C 3078M /2S C 4012 - 7 ^ J / - / 7 2SC3070ÜI/1 2SC 4012 '> • ; = ! > h 7 > y ^ Î î Amplifier Epitaxial Planar NPN Silicon Transistors

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

2SK332

Abstract: 2sc693 2SC306 2SD43 2SB6 2SK33 2SC338 sd331 SB5.0
Contextual Info: 3 f Contin ued from preceding page. SANYO HIGH FREQUENCY APPLICATIONS Classified by package and arranged in order of decreasing £7 . Minus sign for PUP is omitted due to space limitations. Type Ntndber Case Applications VCBO [V] 2SC207S 10220 27MHz CB Transceiver Driver

AUDIO AMPLIFIER

Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr

sc 3228

Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X

2SC3096

Abstract: 2SC3071 2SC3082K 2SC3058 2SC3067 2SC3089 2SC3056 2SC3056A 2SC3057 2SC3058A
Contextual Info: - 144 - 13=25*0, *EP(ÎTc=25t; M ¿ ít 2SC3056 £ 1 V'CBO V’ cEO lc(DC) Pc Pc* ICBO (max) (V) (V) (A) (W) (W) (uk) VcB (V) M W 1SÈ , . .»F Unin) (max; (Ta=25tC ) OEPiâtypig] / «BEVadw V’ CE (V) (max) (V) Ic/ÎE (A) (V) le (A) 1b (A) SW Reg/DDC 450

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

V1525

Abstract: 2SC3114 2SA1692 2SC3068 High Vebo 001S4 2SC3071 2sc3495
Contextual Info: b3E í 7W07b SAfÍYO 001S42Q ISS « T S A J H i g h “ h p g H i g h V g ß Q T r a n s i s t o r s SANYO SEMICONDUCTOR CORP Case outlines unit:11ml SANYO :SMCP »Me— 0.1 B’ -Base n -Jlector ltter ale H i g h —hFE, H1g h —VEBO T r a n s i s-toi-s

TT 2076

Abstract: 2SD1491 2SD1929 2SC3907 toshiba 2SD1407 2056 2SD2058 2SD1266 2SD2251 nec 258
Contextual Info: - 258 - m € Type No. 2SD 2056 2SD 2057 2SD 2058 * 2SD 2059 * 2SD 2060 2SD 2061 ^ 2SD 2062 2SD 2063 2SD 2064 2SD 2066 , 2SD 2067 2SD 2068 2SD 2069 2SD 2070 2SD 2071 2SD 2072 2SD 2073 2SD 2074 2SD 2075 2SD 2076 * 2SÖ 2077 2SD 2078 2SD 2079 2SD 2080 2SD 2081

TT 2146

Abstract: tt 2144 2sc3792 2SD1671 2SD1952 2SD1589 2sd1020 2sd2012 2sd1944 2SD2005
Contextual Info: - 26 0 - s tt s Type No. « Manuf. 2SD 2 1 2 7 X 2? 2SD 2 1 2 8 - ÎL 2SD 2129 2SD 2130 „ S S 2SD 2131 S 2 2 SD 2 1 3 2 □ —A zou 2133 f£» T 2SD 2136 fâ T 2SD 2142 □ —A 2 SD 2 1 4 3 , □ —A □ —A 2S0 2144S 2SD 21 4 4 , □ —A 2 SD 2 1 4 5

Contextual Info: H i gh - hp g High V gg QT r an si s to r s ale Hi g h — hF E, 1 7 A B H ig h — V E B O Ti-ansi s t o r sSANYO:SMCP Case outlines unit:mm SANYO:MCP 1 :B, 2 :E, 3 :C. ” » p 1 i ca t i o n s A tp •+■ *1 « V 1* *—* *—* * High hFE (500 to 3200)

2sc3495

Abstract: 2SA1692
Contextual Info: SAfiYO High-hpg ole H i gin — h F E . H i g h — V E B O F e a t u r e s ♦ ♦ ♦ ♦ High V^ßQ T r a n s i s t o r s T r - a n s i s t o r s l :Base SANYO:SMCP 2:Emi tter 3 -Co 1lector X cat. i o n s A p p l c High hFE 500 to 3200 * AF amp High VEBO S 15V