2SD2064 Search Results

2SB1371

Abstract: 2SD2064
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS

2SB1371

Abstract: 2SD2064
Contextual Info: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C

2SB1371

Abstract: 2SD2064
Contextual Info: Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 1 Parameter

943P

Contextual Info: Power T ransistors 2SD20Ó4 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n i t I mm 5 .2 m a x . Ì /3 .2 , 1 5 .5 m a x . • Features 6 .9 m m . • V ery good lin earity of DC c u r re n t gain hFE

Contextual Info: Power T ransistors 2SB1371 2SB1371 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2064 c->o • Features 6.9min. -f- • V ery g oo d lin e a rity o f D C c u r r e n t gain hpE • H igh tra n sitio n fre q u e n c y (f-r)

943P

Abstract: ic 941 2SB1371 2SD2064
Contextual Info: Power Transistors 2SD2064 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n it I mm . 1 5 .5 m ax. • Features 5 .2 m a x . Ì/3 .2 6 .9 m m . * • V e ry g o o d lin e a r ity o f D C c u r r e n t g a in h FE

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current

2SB1371

Abstract: 2SD2064
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

2SC263A

Abstract: 2sc2078 2SC2320 2SC763 2SC2989 2SC3393 2SC3360 2sc2238 2SC710 2SC1663
Contextual Info: - 120 - M £ Type No. 2SC 1650 a— h 2SC 1651 ^ 2SC 1652 a— U □— A 2SC 2SC 2SC 2SC 1653 ^ 1654 1655 16 5 5A a a s a a « 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1656 1657 1658 * 1659 1660 1661 1662 1663 4 1664 2SC 1665 2SC 1667 2SC 1668 2SC 2SC 2SC 2SC

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100