2SC3059 Search Results

Contextual Info: 2SC3059 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)850 V(BR)CBO (V)1.2k I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc3178

Abstract: 2SC3059 5400V C00C
Contextual Info: January 1990 Edition 1.1 P R O D U C T P R O FILE 2SC3178, 2SC3059, 2SC3060, 2SC3061 Silicon High Speed Power Transistor DESCRIPTION T h is series are s ilic o n NPN p la n e r general p u rp o se , h ig h p o w e r s w itc h in g tra n s is to rs fa b ric a te d w ith F u jits u 's

2SC3050

Abstract: 2SC3178 2SC306 2SC3059 NPN Transistor VCEO 1000V 2SC3118 2SC3060 2SC3061 NPN transistor for switching applications, 400V fujitsu RET transistors
Contextual Info: F U J I TS U M I C R O E L E C T R O N I C S 31E D Bi 3 7 M ci7ti2 O ü l b S T O □ IHFfll c P r - 3 3 *-nr U l T T f T January 1990 Edition 1.1 rU JllbU "= " PRODUCT PROFILE ' 2SC3178, 2SC3059, 2SC3060, 2SC3061 Silicon High Speed Power Transistor_

2SC3096

Abstract: 2SC3071 2SC3082K 2SC3058 2SC3067 2SC3089 2SC3056 2SC3056A 2SC3057 2SC3058A
Contextual Info: - 144 - 13=25*0, *EP(ÎTc=25t; M ¿ ít 2SC3056 £ 1 V'CBO V’ cEO lc(DC) Pc Pc* ICBO (max) (V) (V) (A) (W) (W) (uk) VcB (V) M W 1SÈ , . .»F Unin) (max; (Ta=25tC ) OEPiâtypig] / «BEVadw V’ CE (V) (max) (V) Ic/ÎE (A) (V) le (A) 1b (A) SW Reg/DDC 450

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

2sd898 hitachi

Abstract: KT816A 2SC2906A BUV36 2SD90 BUV36A 2n6095 2N5700 MJE8500 THB13
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Max (A) (V) ON) PD hFE Min *T (HZ) r 'CBO Max (A) Max (s) (CE)ut Max (Ohms) Top«r Max Package Style (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . -15 . .

TO-220 JEDEC

Abstract: 2SA1042 2SC2431 Jedec TO-3 FT2551 JEDEC
Contextual Info: Section 1 Ring Emitter Transistors — At a Glance Devio# C a a a n a Polarity M axim um Rating« V c e o (V ) lc (A ) 1-3 2SA1041 2SA1042 2SC2431 2SC2432 JEDEC TO-3 PNP PNP NPN NPN -120 -70 120 70 -15 -15 15 15 1-7 2SA1043 2SA 1044 2SC2433 2SC2434 JEDEC TO-3

2SC2625

Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300