2SC 102 Search Results

2SC521A

Abstract: 2sc1684 2SC1359 2SC1687 2SC2229 2SC2258 2SC4455 C2258 2SC549 2SC102
Contextual Info: - * * * * * * * * * * * * * * * * * * * * * * * * * * * S € Type No. 2SC 64 2SC 65 *' 2SC 66 2SC 67 2SC 68 2SC 69 2SC 70 2SC 71 2SC 72 2SC 73 2SC 74 2SC 75 ^ 2SC 76 s 2SC 77 2SC 78 2SC 79 ; 2SC 80 /2SC 81 2SC 82 2SC 83 2SC 84 2SC 85 2SC 86 2SC 92 2SC 95

sc 1046

Abstract: 2SD350 2SC 1026 2SC1957 mitsubishi 2sc 1018 2sc943 2SD226A 2SC2036 2SD371 2SC763
Contextual Info: - 104 - m « Type No. tt € Manuf. * 2SC 1014 * 2SC 1015 — • z * 2SC 1016 * 2SC 1017 ^ * * 2SC 1018— ^ h 2SC 1021 z * 2SC 1022 = * * 2SC 1023 * 2SC 1025 * * * 2SC 1026 = .E ^ £ SANYO 2SD612 m m IC TOSHIBA HITACHI ÍL 2SC790 2SC998 2SC2221 2SC2036 s

2SC3480

Abstract: 2SC3479 2SC3675 2SC3676
Contextual Info: 2SC3675 2 SCI 7 5 5 2 SCI 7 5 6 2 SCI 7 5 7 2SC367 6 2 SB 1 0 3 7 2 SDÌ 4 5 9 2 SAI 0 1 1 2SC2344 2 SD3 8 6A 2 SD3 8 7A 2SD 38 6 2 SD3 8 7 2 SD 8 23 2 SDÌ 1 5 9 2SC 3 18 9 2SC3173 2SC 3 174 2 SC 3 175 2SC 3176 2SC3589 2SC3590 2SC3591 10220 10220 10220 10220

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

Contextual Info: Power Transistors 2SC 3974 2SC3974 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High sp eed switching • High collector-base voltage V Cbo • Wide area of safety operation (ASO)

2SC2609

Abstract: 2Sc260 transistor z ss
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES

transistor BD 680

Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
Contextual Info: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors

Contextual Info: Power Transistors 2SC 4421 2SC4421 Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching • Features U n it I mm 4.4m ax. 10.2m ax. 5.7m ax. • High speed sw itching jJ ' • High collector-base voltage ' V cb o

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

Siemens 1736

Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Contextual Info: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

2SC 3531

Contextual Info: T O SH IB A 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5092 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure, High Gain. NF= 1.8dB, |S2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
Contextual Info: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

Contextual Info: T O SH IB A 2SC5085 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 508 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S2 1 el2= lldB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

KJE transistor

Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

transistor k 975

Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
Contextual Info: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors

D965

Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
Contextual Info: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

2SC3611

Contextual Info: P o w e r T ra n s is to rs 2SC 3611 2SC3611 Silicon N P N Expitaxial Planar Type Video Am plifier Package Dim ensions • Features High transition frequency f-r • Small collector output capacitance (C„b) • Wide current range ' . I Absolute. M axim um Ratings (T a = 2 5 °C )

2SC4820

Abstract: 2SC402C 2sa860 2SC4503 2SA1663 2SC3858 2SA1494 2SC4517 a1695 2SC4886 2SA1666
Contextual Info: • 2SC type Note: tLA PT * Full-Mold Absolute Maxwnun Ratings iTe=s25'C 2SC2023 2SC2837 Pc VefO W ) VCBO (V) 40 300 300 O o Type No. 150 150 (V ) Electrical Characteristic!» {Ta=25C jjjjjB I hre fr Thermal Resistance \MHi> {X :m • Dam m A o r W ln S r n a

Transistor BSX 47-10

Abstract: Transistor BSX 45-10 7CW Transistors S1553 7CW 02 Q60218-X45-V6 BSX 45-10 BSX45 BSX47 Transistor NF 45-10
Contextual Info: IS I E G 2SC D • öSBSfciQS DDQ4ÖQ7 i NPN Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~SIEMENS AKTIENGESELLSCHAF BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

Q4431

Contextual Info: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay

Contextual Info: T O SH IB A 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5097 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.2 Low Noise Figure, High Gain. N F = 1.8dB, |S 2 1 el2 = 10dB f=2GHz 2 .9 - 0.3 TT -a MAXIMUM RATINGS (Ta = 25°C)