2SC260 Search Results

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

Contextual Info: 2SC2608 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200è V(BR)CBO (V)200 I(C) Max. (A)17 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC2606 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)50m Absolute Max. Power Diss. (W)950m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.2u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

b0743

Abstract: KT819A B0545 BOT54 PT9784 2N3055-5 mje1660 40636 1561-0403 044VH4
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 .- 10 15 20 >= 30 PT9784A 2N3055/5 SPT3713 SOT9210 044VH1 BLW97 40325 2SC2609 ~~~~~~ 35 40 45 50 S01480 B0142 S3771 BOX13 BOX13 BOX13 40251 MJ2801 MJ2801 MJ2801 KT819A 1561-0403 1561-0404 1561-0404 BOX13/40251

2SC2603

Abstract: 2SC2603 F 2SC2603 G 2SC2603 E sv micro 200EA
Contextual Info: 2SC2603 SILICON TRANSISTOR TO-92B 2SC2603 is NPN silicen planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

2SC2607

Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.

2SC2608

Abstract: 2SA1117 pnp 200v 5a switching times
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.

2SC2607

Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.

2SC2625

Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
Contextual Info: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)

2SC2607

Abstract: 2SA1116 5A30 R6012
Contextual Info: S 2 A 1 1 1 6 U > ' =1VPNPX f h7 ^ y X Í 0 ~ Äxffl ☆ 2SC2607 t =>> r<) / > ? ¡lenzte I) £ to l * * 5 È t è Ta=25°C) * a v IE B ? 9 3 l- • - • I ; 7 ^ lE ft 2SA1116 ^ VcBO —200V VcEO -2 0 0 V 1 ; 7 y ' "< -X fŒ Vf.bo 3 1 -7 Ic -6 V -1 5 A

Contextual Info: TO-92B 2SC2603 is NPN silicen planar transistor purpose designed for low powei • general amplifiers. ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature

2SC2609

Abstract: 2Sc260 transistor z ss
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES

2SC2603

Abstract: 2SC2603 E 2SC2603 F
Contextual Info: TO-92B 2SC2603 is NPN silicon planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature

Contextual Info: 2SC2609 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)15 Absolute Max. Power Diss. (W)170# Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10mØ @V(CBO) (V) (Test Condition)35 h(FE) Min. Current gain.20 h(FE) Max. Current gain.110

2SC2608

Abstract: 2SA1117
Contextual Info: SavantIC Semiconductor Product Specification 2SC2608 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC2608

Abstract: 2SA1117
Contextual Info: Inchange Semiconductor Product Specification 2SC2608 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC2607

Abstract: 2SA1116
Contextual Info: JMnic Product Specification 2SA1116 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2607 APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC2603

Abstract: 2SC2603 F 2SC2603 E transistor 2sc2603 2SC2603 G cl 100 hie hre hfe
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC2603 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2603 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING 4.3M A X frequency voltage amplify application. Small package for easy mounting.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

NEC 3358

Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
Contextual Info: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.