2SC3312 Search Results

2SC3312

Abstract: 2SA1310 IC1006
Contextual Info: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SC3312

Abstract: 2SC331 2SA1310
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting

2SA1310

Abstract: 2SC3312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SC3312

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SC3312

Abstract: 2SA1310
Contextual Info: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SA1310

Abstract: 2SC3312 Low-Frequency Low-Noise PNP transistor
Contextual Info: Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1310

Abstract: 2SC3312
Contextual Info: Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm ● ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

2sc3288

Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
Contextual Info: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313

2SA1310

Abstract: 2SC3312
Contextual Info: Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1310

Abstract: 2SC3312
Contextual Info: Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping

2SA1310

Abstract: 2SC3312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SA1310

Abstract: 2SC3312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Allowing supply with the radial taping

2SA1310

Abstract: 2SC3312
Contextual Info: Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping • Low noise voltage NV

2SC3312

Abstract: 2SA1310
Contextual Info: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type