2SC3298 Search Results

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2sa1306

Abstract: 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B

2SC3298

Abstract: 2SA1306 2SA1306 2SC3298 2SA1306 toshiba 2SC3298A SC3298 2SA1306A 2SA1306B 2SC3298B toshiba tb 607
Contextual Info: TOSHIBA TO S H IB A D Ë ^ m T a S O aD0 7 b7 S D ^ f r' 2SC3298 2SC3298A 2SC3298B 9 0 9 7 2 50 "st OISCRETE/OPTO> S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS <D I S C R E T E / O P T O ) 5òC 07675 o r - POWER AMPLIFIER APPLICATIONS. n -o Unit in ima

Contextual Info: TO SHIBA 2SC3298B Transistor U n it in m m 1 Ù3MAX. Silicon NPN Epitaxial Type PCT Process Power, Driver Stage Amplifier Applications F e a tu re s • High Transition Frequency - fT = 100MHz (Typ.) • Complementary to 2SA1306B A b s o lu t e M a x im u m R a t in g s (Ta = 2 5 C)

2SA1306

Abstract: 2SA1306A 2SA1306B 2SC3298 2SA1306 2SC3298 2SC3298A 2SC3298B
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

2SC3298A

Abstract: 2SC3298 2SA1306 toshiba 0D07T
Contextual Info: Sb TOSHIBA {DISCRETE/OPTO} 2SC3298 2SC3298A 2SC3298B 9097250 T O S H IB A DE~jj ^ 0 ^ 7 5 5 0 G D D ? t 7 S SILICON NPN EPIT A X IA L TYPE PCT PROCESS 5ôC (D IS C R ETE /O PTO ) 07675 o r - POWER AMPLIFIER APPLICATIONS. n -o 7 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS.

2SA1306 2SC3298

Abstract: 2sc3298 2SC3298B 2SC3298A 2SA1306 2SA1306A 2SA1306B silicon power transistors
Contextual Info: Product Specification www.jmnic.com 2SC3298 2SC3298A 2SC3298B Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

Contextual Info: 2SC3298 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240

2sc3288

Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
Contextual Info: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313

1306B

Abstract: 2SA1306B
Contextual Info: TO SHIBA 2SA1306B Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process 1Q3M AX. For General Purpose Switching and Amplifier Applications Features • High Transition Frequency : fT = 100M Hz (Typ.) • Com plem entary to 2SC3298B Absolute Maximum Ratings (Ta = 25 C)

2SC3298B

Abstract: 2SA1306B 2SA1306
Contextual Info: TO SH IB A DISCRETE/OPTO 45E D • □ □ 1 7 ñ l ci 3 « T O S M TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3298B "T • POWER AM PLIFIER APPLICATIONS. Unit in ram DRIVER STAGE AM PLIFIER APPLICATIONS. 0 3 .2 ± Q 2 FEATURES: . High Transition Frequency : fT=100MHz (Typ.)

2SC3296

Abstract: 2SD1407 2SA1306 2SC3298 2SB1017 2SC3297 2SD1405 2SA1304 2SA1305 2SA1306 2SA1306A
Contextual Info: by TOSHIBA Powered 8 TO-220 ( j D PACKAGE SERIES * MAX. * t r 'c Type No. NPN 2SC3296 2SA1304 ^FE 2SC3298 2SA1306 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 (A) (V) (W) 150 20 f f TYP. v CE|sat> MA* - SW Time T Y P .

2SA1306 2SC3298

Abstract: 2SC3298 2SC3298A 2sa1306 2SC3298B 2sa1306a 2SA1306B
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2sc3298

Abstract: 2SA1306 2SC3298 3298B 2SC3298A 2sa1306
Contextual Info: 2SC3298,3298A,3298B SUCON NPNEPTAXAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 1 0 . 3 MAX. FEATURES: . High Transition Frequency : fT~100MHz Typ. . Complementary to 2SA1306, 2SA1306A, 2SA1306B MAXIMUM RATINGS CHARACTERISTIC

2sA1306

Abstract: 2SA1306A C5C5.1 1306B K158 2SA1306B
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1306,1306A,1306B POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 0Z.2±O.2 FEATURES: . High Transition Frequency : fx=100MHz Typ. . Complementary to 2SC3298, 2SC3298A, 2SC3298B MAXIMUM RATINGS (Ta=25°C)

2sa1306

Abstract: 2SA1306B 2SC3298B CI43 Motorola 406 R6872
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3 b ?5 S4 0 0 el37b7 MOTOROLA m0 4 Tb r(*er t*,'s data sheet by 2SC3298B/D T=-3 3 -Q { SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors • Designed for use as High Frequency Drivers in Audio Amplifiers

2SD1405

Abstract: 2SA1304 2SA1305 2SA1306 2SA1306A 2SA1306B 2SC3296 2SC3297 2SC3298 2SC3298A
Contextual Info: — 3 O n 8 TO-220 (T S ) P A CK A G E S E R IE S IE M CD l> W H (X) n ✓0 m Application * MAX. A tr 'c Type n o . NPN T V Vertical Out PNP 2SC3298 2SA1306 Audio Drive 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 2SB1015

2SC3298

Abstract: 2SA1306 TOSHIBA 2SA1306 2SA1306A 2SA1306B 2SC3298A 2SC3298B 2SA1306 2SC3298
Contextual Info: TOSHIBA "st OISCRETE/OPTO> D Ë ^ m T a S O aD0 7 b7 S D ^ f r' 2SC3298 2SC3298A 2SC3298B 9 0 9 7 2 50 T O S H IB A S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS <D I S C R E T E / O P T O ) 5òC 07675 o r - POWER A M PLIFIER APPLICATIONS. n -o Unit in ima

2SA1306

Abstract: 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298 transistor 2SC3298
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B

2SA1306 2SC3298

Abstract: 2SC3298 2SC3298A 2SA1306 2SC3298B 2SA1306A 2SA1306B
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

2SA1306B

Abstract: 2SC3298B CL01 2sa1306 cm72sd
Contextual Info: TOSHIBA DISCRETE/OPTO H5E D • TGTTSSD □ □ 1 7 ñ l cj 3 ■ TOSHIBA TRANSISTOR TOSM 2SC3298B SILICON NPN EPITAXIAL TYPE (PCT PROCESS) "T - ^ - Od POWER AMPLIFIER APPLICATIONS. Unit in ram DRIVER STAGE AMPLIFIER APPLICATIONS. 02»2±a2 FEATURES: . High Transition Frequency : fT=100MHz (Typ.)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)