2SC3279 Search Results

2SC3279

Contextual Info: 2SC3279 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3279 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性が良好です。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準) (VCE = 1 V, IC = 2 A)

transistor Common collector configuration

Abstract: 2SC3279
Contextual Info: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)

14024

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO

2SC3279

Contextual Info: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SC3279 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2sc3279

Abstract: 2SC327
Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sc3279

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)

Contextual Info: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)

2SC3279

Contextual Info: 2SC3279 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 3.5 ±0.2 4.55±0.2 +0.2 4.5±0.2 High DC current gain and excellent hFE linearity 1.27 Typ.

2SC3279

Contextual Info: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3279

Contextual Info: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High DC Current Gain and excellent hFE Linearity

2sc3288

Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
Contextual Info: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313

2sc3279

Contextual Info: MCC TM Micro Commercial Components 2SC3279 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity

2SC3279

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Pin Configuration

2sc3279

Contextual Info: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)

2SC3279

Contextual Info: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)