2SA1306B Search Results

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2sa1306

Abstract: 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B

2SA1306B

Abstract: 2sa1306 2SC3298B
Contextual Info: 45E D • SOTTESO □□177TÛ T T0S4 TOSHIBA TRANSISTOR 2SA1306B SILICON PNP EPITAXIAL TYPE PCT PROCESS TOSHIBA " T - ' V S - (DISCRETE/OPTO) POWER AMPLIFIER APPLICATIONS. H Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 1Q3MAX. FEATURES: . High Transition Frequency : fT=100MHz (Typ.)

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1305A 2SA1306B 2SC3298A to-22 2SC3298 2SC3298B 2SA1306 Y
Contextual Info: AOK AOK Semiconductor P roduct Specification 2SA1306 2SA 1306A 2SA1306B Silicon PNP P o w er Transistors DESCRIPTIO N • W ith T D -2 2 0 F a package • C om plem ent to type 2S C 3298 ,2S C 3298A ,2S C 3298B A PP LIC A TIO N S • P ow er am plifie r applications

Contextual Info: TO SHIBA 2SC3298B Transistor U n it in m m 1 Ù3MAX. Silicon NPN Epitaxial Type PCT Process Power, Driver Stage Amplifier Applications F e a tu re s • High Transition Frequency - fT = 100MHz (Typ.) • Complementary to 2SA1306B A b s o lu t e M a x im u m R a t in g s (Ta = 2 5 C)

2SA1306

Abstract: 2SA1306A 2SA1306B 2SC3298 2SA1306 2SC3298 2SC3298A 2SC3298B
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

2SA1306 2SC3298

Abstract: 2sc3298 2SC3298B 2SC3298A 2SA1306 2SA1306A 2SA1306B silicon power transistors
Contextual Info: Product Specification www.jmnic.com 2SC3298 2SC3298A 2SC3298B Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

1306B

Abstract: 2SA1306B
Contextual Info: TO SHIBA 2SA1306B Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process 1Q3M AX. For General Purpose Switching and Amplifier Applications Features • High Transition Frequency : fT = 100M Hz (Typ.) • Com plem entary to 2SC3298B Absolute Maximum Ratings (Ta = 25 C)

2SC3296

Abstract: 2SD1407 2SA1306 2SC3298 2SB1017 2SC3297 2SD1405 2SA1304 2SA1305 2SA1306 2SA1306A
Contextual Info: by TOSHIBA Powered 8 TO-220 ( j D PACKAGE SERIES * MAX. * t r 'c Type No. NPN 2SC3296 2SA1304 ^FE 2SC3298 2SA1306 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 (A) (V) (W) 150 20 f f TYP. v CE|sat> MA* - SW Time T Y P .

2SA1306 2SC3298

Abstract: 2SC3298 2SC3298A 2sa1306 2SC3298B 2sa1306a 2SA1306B
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

Contextual Info: i TOSHIBA TRANSISTOR ZSC3Z98B SILICON NPN EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. ia3MAX. 03.2±Ol2 FEATURES: . High Transition Frequency ma_ fT=100MH z (Typ.) . Complementary to 2SA1306B MAXIMUM RATINGS

2sc3298

Abstract: 2SA1306 2SC3298 3298B 2SC3298A 2sa1306
Contextual Info: 2SC3298,3298A,3298B SUCON NPNEPTAXAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 1 0 . 3 MAX. FEATURES: . High Transition Frequency : fT~100MHz Typ. . Complementary to 2SA1306, 2SA1306A, 2SA1306B MAXIMUM RATINGS CHARACTERISTIC

21g transistor

Abstract: 2SA1306B
Contextual Info: TOSHIBA TRANSISTOR 2SA1306B SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz (Typ.) . Complementary to 2SC3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

2SD1405

Abstract: 2SA1304 2SA1305 2SA1306 2SA1306A 2SA1306B 2SC3296 2SC3297 2SC3298 2SC3298A
Contextual Info: — 3 O n 8 TO-220 (T S ) P A CK A G E S E R IE S IE M CD l> W H (X) n ✓0 m Application * MAX. A tr 'c Type n o . NPN T V Vertical Out PNP 2SC3298 2SA1306 Audio Drive 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 2SB1015

2SA1306

Abstract: 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298 transistor 2SC3298
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B

2SA1306 2SC3298

Abstract: 2SC3298 2SC3298A 2SA1306 2SC3298B 2SA1306A 2SA1306B
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

2SC3298

Abstract: 2SA1306 2SA1306 2SC3298 2SA1306 toshiba 2SC3298A SC3298 2SA1306A 2SA1306B 2SC3298B toshiba tb 607
Contextual Info: TOSHIBA TO S H IB A D Ë ^ m T a S O aD0 7 b7 S D ^ f r' 2SC3298 2SC3298A I2SC3298B 9 0 9 7 2 50 "st OISCRETE/OPTO> S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS <D I S C R E T E / O P T O ) 5òC 07675 o r - POWER AMPLIFIER APPLICATIONS. n -o Unit in ima

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

motorola AN1308

Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
Contextual Info: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high