2SC367 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage

2SC3678

Contextual Info: Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC3678

Abstract: transistor ,12v ,Ic 1A ,NPN transistor 12v 1A NPN transistor npn 12V 1A Collector Current
Contextual Info: SavantIC Semiconductor Product Specification 2SC3678 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage switching transistor APPLICATIONS ·Switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

Contextual Info: Ordering num ber: EN 1800E _ 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications A p p licatio n s • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focus applications.

2-7D101A

Abstract: 2SC3673
Contextual Info: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 MAX. 2.7MAX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : VCE (sat) -0.5V (Max.) M A X IM U M RATINGS (Ta = 25°C)

2-7D101A

Abstract: 2SA1432 2SC3672
Contextual Info: TOSHIBA 2SC3672 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3672 HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • • • High Voltage : V0BO-3OOV, V£ e o -300V

2sc3714

Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714

2-7D101A

Abstract: 2SC3670
Contextual Info: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS -iS-, 7.1 M A X • • High DC Current Gain and Excellent hjpE Linearity hjrE (1) —140—600

2-7D101A

Abstract: 2SC3670
Contextual Info: TO SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM PO W ER AM PLIFIER APPLICATIONS • 7.1 M AX High DC Current Gain and Excellent hpg Linearity : hpE (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)

2SC3480

Abstract: 2SC3479 2SC3675 2SC3676
Contextual Info: 2SC3675 2 SCI 7 5 5 2 SCI 7 5 6 2 SCI 7 5 7 2SC367 6 2 SB 1 0 3 7 2 SDÌ 4 5 9 2 SAI 0 1 1 2SC2344 2 SD3 8 6A 2 SD3 8 7A 2SD 38 6 2 SD3 8 7 2 SD 8 23 2 SDÌ 1 5 9 2SC 3 18 9 2SC3173 2SC 3 174 2 SC 3 175 2SC 3176 2SC3589 2SC3590 2SC3591 10220 10220 10220 10220

2-7D101A

Abstract: 2SC3671
Contextual Info: TOSHIBA 2SC3671 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 STOROBE FLASH APPLICATIONS U nit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS 7.1 M AX. • High DC Current Gain and Excellent h p g Linearity : hpE (i) = 140~450 : h F E ( 2) = 70 (Min.)

2SC3676

Abstract: ITR05795 ITR05797 ITR05798 VITR05796
Contextual Info: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

2-7D101A

Abstract: 2SA1432 2SC3672 C3672 Display Nixie
Contextual Info: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V

2-7D101A

Abstract: 2SC3673 C3673
Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain : hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3671

Contextual Info: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)

2SC3679

Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max

2-7D101A

Abstract: 2SC3670
Contextual Info: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 7.1 MAX • • High DC Current Gain and Excellent hEE Linearity hEE (1) —140—600 ^FE (2) “ 70 (Min.), 200 (Typ.)

2-7D101A

Abstract: 2SC3673 C3673
Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

High-Voltage Amplifiers

Abstract: 2SC3675
Contextual Info: Ordering num ber: EN1800E 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focuB applications. Features

2SC3679

Abstract: transistor applications 2sc3679 transistor
Contextual Info: Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2-7D101A

Abstract: 2SC3671
Contextual Info: TOSHIBA 2SC3671 2SC3671 TO SHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • 7.1 MAX. High DC Current Gain and Excellent hpg Linearity : ^FE (1) —140—450 : hFE(2) = 70 (Min.)

2-7D101A

Abstract: 2SC3670
Contextual Info: TOSHIBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hpE Linearity : ^FE (1) —140—600 : hFE( 2 ) = ?0 (Min.), 200 (Typ.)

2-7D101A

Abstract: 2SC3673
Contextual Info: TO SH IBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 M A X • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)