023SBQS Search Results

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

222-1

Abstract: AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a
Contextual Info: 2SC D • 023SbQS Q0Q4ÖÖÖ 7 « S I E G NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. . 2 N 2221 A 2 N 2222 A - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are

Siemens 1736

Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Contextual Info: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

AF106

Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
Contextual Info: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72

bu 2225

Abstract: BU208A BU 102
Contextual Info: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

14A3

Abstract: C67078-A1402-A2
Contextual Info: i ÖÖD D • 023SbQS □ 0 m cJ3Q a « S I E G 88D 14930 D ' T m3 SF " / / BUZ 216 SIEMENS AKTIEN6ESELLSCHAF -Main ratings N-Channel Draln-source voltage K s Continuous drain current ij Draln-source on-reslstance ^ O S o n ) Description

BCY 68

Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59
Contextual Info: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors

BCY59

Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
Contextual Info: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors

Contextual Info: ÔE35LDS 00Û1LM2 SRO SIEMENS BSP 452 M in iS m a rt • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads

STT 3 SIEMENS 431

Abstract: 80c517 Siemens sab 2793b-p
Contextual Info: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM

transistor Siemens 14 S S 92

Abstract: transistor 115 47e
Contextual Info: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code

BMS404

Contextual Info: S IEM EN S ISDN D-Channel Exchange Controller IDEC PEB 2075 CM OS 1C 1 • • • • • • • • • • • • • Features Four independent HDLC channels 64-byte FIFO storage per channel and direction Handling of basic HDLC functions flag detection/generation

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

SMD Transistor g14

Abstract: BTS 433
Contextual Info: •I Ö23SLGS □□C I2717 001 ■ SIEMENS PROFET BTS425L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation

TRANSISTOR BFW 16

Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

03gm

Abstract: IRC W-500 Transistor BSX 95
Contextual Info: 25C D • A 2 3 £ b Q 5 0 D Q M Ö 1 S 2. ■ S I E 6 BSX48 BSX49 NPN Silicon Planar Transistors - S I E M E N S A K T I E N 6 E S E L L S C H A F B SX 4 8 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected to the case.

TRANSISTOR K 2191

Abstract: TH 2190 Transistor BSY62
Contextual Info: 2SC » • ô 2 3 S b D S 00G4fl24 3 « S I E G j - ¡'- ’h S '- o f NPN Transistors for Switching Applications n -S I EM EN S A K T I E N G E S E L L S C H A F . B S Y 17 BSY 18 B S Y 62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

siemens b 58 468 la intel 80

Abstract: siemens "b 58 468" la intel 80 siemens MFAB alco ff 4-4 dah PEB2055n CDS2C MOD1024 siemens b 58 468 la intel 80 0/siemens "b 58 468" la intel 80
Contextual Info: SIEMENS Extended PCM Interface Controller EPIC PEB 2055 CMOS 1C Preliminary Data 1 Introduction 1.1 Features * Board Controller for up to 32 ISDN or 64 voice subscribers * Nonblocking switch tor 128 channels (16.32. or 64 kbps bandwidth) * Two consecutive 64 kbps channels can be switched as a single 128 kbps channel.

Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

Siebensegmentanzeige

Contextual Info: SIEM ENS M7E D fi23StGS DG27Ô37 b « S I E G • SIEMENS AKTIENGESELLSCHAF Sieben-Segment-Anzeige Seven Segment Display 7,6 mm 0.3” HDSP-7801 Besondere Merkmale • Hohe Lichtstärke • Gehäuse ist optimiert für den Einsatz bei starkem Fremdlicht • Kompaktes 0,3 x 0,5-inch-Gehäuse

Contextual Info: SIEM ENS ñ235bQS QD^bbbB H51 Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics

Contextual Info: SIEMENS Silicon PIN Diodes BAR 60 BAR 61 • RF switch • RF attenuator for frequencies above 10 MHz Type Marking Ordering Code tape and reel BAR 60 60 Q62702-A786 Pin Configuration Package1) SOT-143 i• n0 M M kNl o 5i ■• EHA07Q13 BAR 61 Q62702-A120