00Q40 Search Results

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

lead selenide

Abstract: Detectors am fuses 71180 71200 led, detector X1092
Contextual Info: bölS^? 15E D ORIEL CORP r. . 00Q40S1 LEAD SULFIDE and LEAD SELENIDE DETECTORS BIAS T h ese detectors must be biased through a load resistor, typically 1 M£2, to obtain an output signal. O ur 7 0 7 0 4 Bias • ■ ■ ■ ■ Excellent detectors for the 1-4 urn region

LCB007

Abstract: LEA100K LSI Product Selector Guide "content addressable memory" array memory blocks amd 2901 alu 7400 logic gate ic
Contextual Info: L S I LOGIC CORP 53GMÔ04 00Q400D 7 M L L C M2E D T-IZ-tl-O'i LEA100K Embedded Array Series Description The LEA100K Embedded A rray™ Series is an HCMOS ASIC product which combines the benefits of cell-based and array-based ASICs. Designspecific, user-defined, semicustom, standard cell

Contextual Info: [& TOKO TK83854 HIGH POWER FACTOR PREREGULATOR FEATURES • Control Boost PWM to 0.99 Power Factor Pin Compatible With UC1854, UC2854, & UC3854 ■ Limit Line Current Distortion to <5% Licensed Source ■ W orld-W ide Operation W ithout Switches Low Start-up Supply Current

27256 microchip

Abstract: 27256 block diagram DS110U 27256-15 microchip 27256dc 27256 pin diagram 27256-25 MICROCHIP microchip 27256 microchip 27256-15
Contextual Info: MICROCHIP ; -M TECHNOLOGY GENERAL INSTRUMENT INC fifl D 27256 b l 0 3 5 Gl 0 0 0 3 ^ = 1 4 • r a E L I M B I N l  K Y OEMFO R(M 1^TQ [M 256K (32K x 8 Bit NMOS UV Erasable PROM FEATURES PIN CONFIGURATION T o p V iew ■ High Speed Performance — 150ns Maximum

ECG1113

Abstract: CI 7405
Contextual Info: P H IL IP S E C G INC 17E • hbSBTaô • • • • OUTPUT POWER 2.1 W 12 V LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE AUDIO AMPLIFIER 8 il h ,2 4 < f The EC G 1113 is a monolithic integrated c ir ­ cuit in a 14-lead quad in -lin e plastic p ackage.

Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion

Contextual Info: SPECI FI CATI ON DEVICE NAME 1G B T TYPE NAME : 1 M B C 0 5 - 0 6 0 SPEC. No. : M S 5 F 3 5 1 8 DATE : Jun.-25-1996 F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED F u j j E l e c t r i c C c U _ td .

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Abstract: JRC 5002 yamaha 68000
Contextual Info: YAMAHA'L S I YM7405B IDNDCH ISDN basic access interface with D channel packet • GENERAL DESCRIPTION The YM7405B is an upgraded version of the YM7405 chip with the ISDN user-network interface function digital four-wire time-division full-duplex operation .

CA82C54

Abstract: CA82C54-10 CA82C54-5 CA82C54-8 interface 8254 with 8086
Contextual Info: fÿ CA82C54 TU N D RA PROGRAMMABLE INTERVAL TIMER • A high performance device featuring pin and functional compatibility with the industry standard 8254 • Supports 8086/88 and 80186/188 micro­ processors • High Speed: zero wait state 10 MHz and 8 MHz

ECG1113

Contextual Info: bbSHTaô DGGM047 fl 17E 0 PHILIPS E C G INC T-74-0 5 -0 1 ECG1113 AUDIO AMPLIFIER sem icon ductors OUTPUT POWER 2.1 W 12 V - 8 il LOW DISTORTION • LOW QUIESCENT CURRENT • HIGH INPUT IMPEDANCE * •4W .u<r 1 "T ' u . '- ’ I i 1 T I U O',« ioaf-«| 1M 1-

4800AZ

Abstract: Lj70 GM71C4800
Contextual Info: GM71C4800A/AL GM71CS4800A/AL GoldStar 524,288 WORDS X8BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The G M 71C4800A/AL is the new generation d ynam ic RAM organized 5 2 4 ,2 8 8 x 8 B it. G M 71C4800A/AL has realized higher density,

80286 microprocessor pin out diagram

Abstract: interface 8254 with 8086 80286 address decoder CA82C54 CA82C54 -10CP Tundra Semiconductor B101 CA82C54-10 CA82C54-5 CA82C54-8
Contextual Info: fÿ CA82C54 TU N D RA PROGRAMMABLE INTERVAL TIMER • A high performance device featuring pin and functional compatibility with the industry standard 8254 • Supports 8086/88 and 80186/188 micro­ processors • High Speed: zero wait state 10 MHz and 8 MHz

Contextual Info: HY534256A Series “ H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION ITie HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating