71200 Search Results

Contextual Info: B 3 RADI A L L TECHNICAL DATA SHEET 26.5GHz SMA-2.9 FAILSAFE R570 712000 Page 1/ 2 S.P.D.T. SWITCH OPTIONS : right the products, we reserve our to Improve goal continual In the FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION >= AVER. POWER (#) : 0 -26.5GHz

CI 4026

Abstract: FT8128S
Contextual Info: 128K x 8 SRAM FT8128 - 55/70/10/12 Force Technologies Ltd, Ashley Court, Henly, Marlborough,Wiltshire SN8 3RH, England Tel. +44 0 1264 712000 Fax. +44 (0)1264 731444 Description The FT8128 is a 1Mbit monolithic SRAM organised as 128K x 8. It is currently available in

DIN 45326

Abstract: DIN 45322
Contextual Info: 2 Buchsen Douilles Receptacles 2polig mit Ruhekontakt 2 pdles avec contact de repos 2 pins with rest contact 3 polig DIN 41524 3 pdles DIN 41524 3 pins DIN 41524 71200-121 71200-030 4polig Teilung 72° 4 pdles pas 72° 4 pins 72° spacing 5polig Stereo DIN 41524

3 pin din connector DIN 41524

Abstract: DIN 45329 DIN 45326 5 pin din connector DIN 41524 DIN 45329 connector din 45322 male connector DIN 50049 7 pin din connector DIN 41524 DIN 41524 DIN 71408-075
Contextual Info: Bestellnummern-Verzeichnis Table de No. de commande Index of part numbers B««tell-Nr. No do commande Part No. Seite 71200-030 71200-050 71200-000 71200-070 71200-071 71200-080 71200-082 71200-121 71200-140 71200-150 6 6 6 6 6 6 6 6 6 6 71204-030 71204*040

hp 70004a

Contextual Info: Agilent 71200C M icrow ave Spectrum Analyzer, 50 kHz to 22 GHz Product Specifications Frequency Range 50 kHz to 22 GHz Tunable in 1 Hz increments N 1st IF Frequency H=high IF 3.6214 GHz L=low IF (321.4 MHz) 1 H- 50 kHz to 2.9 GHz N=harmonic number 1 L- 2.7 GHz to 6.2 GHz

Vishay DaTE CODE tsop-6

Abstract: si3410
Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

95xxx

Abstract: si3434 si3495
Contextual Info: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si3433CD

Abstract: SI3433CDV-T1 Vishay DaTE CODE tsop-6 Si3433CDV
Contextual Info: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

dg468dv

Contextual Info: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10  maximum and flatness is 2  max over the specified analog signal range.

Contextual Info: DG447, DG448 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG447, DG448 are dual supply single-pole/single-throw SPST switches. On resistance is 25 W maximum and flatness is 2.2 W max over the specified analog signal range.

Contextual Info: REVISION THESE DRAWINGS ARE THE PROPERTY OF QUALTEK ELECTRONICS AND NOT TO BE REPRODUCED FOR OR COMMUNICATED TO A THIRD PARTY WITHOUT THE EXPRESS WRITTEN PERMISSION OF AN OFFICER OF QUALTEK ELECTRONICS. REV. B DESCRIPTION DATE 06-01-06 RoHS Compliancy 79.4

Contextual Info: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET

FWP-250A

Abstract: FWP-350A FWP-800A A02008 FWP-150A FWP70B FWP-10B FWP-15B FWP-20B FWP-30B
Contextual Info: Bussmann FWP 700V Type 5-1200A R ® Electrical Characteristics Ordering Information I2t A2 Sec Rated Current Clearing Watts Part Carton RMS-Amps Pre-arc at 700V Loss Number Qty. 5 1.6 10 1.5 FWP-5B

Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see

8563a

Abstract: 8120-2582 e4407b 71210C 8560A E4440A 8561A 2007A 8562A AGILENT 8563A
Contextual Info: Agilent 11974 Series Preselected Millimeter Mixers RF Sections Available in Four Bands from 26.5 to 75 GHz Data Sheet For the first time, preselected signal analysis is available to 75 GHz. With preselection, you can quickly and easily characterize all signals of interest. No images or

181d . RDL, Inc., "Instruction Manual for IMD-181D Intermodulation Distortion Simulator"

Abstract: rohde LDMOS NONLINEAR Analog Devices Power Meter class A push pull power amplifier multi port circulator two Tone generator 8vsb modulator
Contextual Info: test & measurement Two-tone IMD measurement techniques Seven rules to ensure the best characterization of non-linear RF components By Keith Barkley T wo-tone testing for intermodulation distortion IMD has a long and venerable history. Since the dawn of RF engineering, it has been used to

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

TSOP 173B

Contextual Info: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition

tsop6 package

Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

71200-H1

Abstract: y-parameter x-band mmic lna X-band lna MAAM28000-A1 MAAM71200-H1 X-band low noise amplifiers mmic case styles maam 23000-A1
Contextual Info: Application Note M542 Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract Rev. V4 Package Description Manufacturer 5 lead, ceramic Kyocera 6 lead, ceramic Kyocera Leadless, 6 port, ceramic StratEdge 7 lead, ceramic Kyocera 8 lead, ceramic

Contextual Info: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus

Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC