SI3424CDV Search Results
SI3424CDV Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3424CDV-T1-BE3 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET | Original | 221.27KB | 11 | ||
| SI3424CDV-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP | Original | 11 |
SI3424CDV Price and Stock
Vishay Intertechnologies SI3424CDV-T1-GE3Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3424CDV-T1-GE3 | 18,000 | 3,000 |
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| SI3424CDV-T1-GE3 | 3,000 | 3,000 |
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SI3424CDV-T1-GE3 | Tape & Reel | 23 Weeks | 3,000 |
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SI3424CDV-T1-GE3 | 18,000 | 30 Weeks | 3,000 |
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| SI3424CDV-T1-GE3 | 3,000 | 30 Weeks | 3,000 |
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SI3424CDV-T1-GE3 | Tape & Reel | 811 | 100 |
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| SI3424CDV-T1-GE3 | Cut Tape | 811 | 5 |
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| SI3424CDV-T1-GE3 | Tape & Reel | 3,000 |
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SI3424CDV-T1-GE3 | Reel | 15,000 | 3,000 |
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SI3424CDV-T1-GE3 | 3,000 |
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SI3424CDV-T1-GE3 | 25 Weeks | 3,000 |
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SI3424CDV-T1-GE3 | 13 Weeks | 3,000 |
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Vishay Intertechnologies SI3424CDV-T1-BE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3424CDV-T1-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3424CDV-T1-BE3 | Tape & Reel | 3,000 | 52 Weeks | 3,000 |
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SI3424CDV-T1-BE3 | Bulk | 3,000 |
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SI3424CDV-T1-BE3 | Reel | 21,000 | 3,000 |
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SI3424CDV-T1-BE3 | 3,000 |
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SI3424CDV-T1-BE3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SI3424CDVT1GE3Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3424CDVT1GE3 | 112,690 |
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SI3424CDV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si3424cdv2002/95/ecsi3424cdv-t1-ge32011/65/eu+1 | |
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Contextual Info: Specification Comparison Vishay Siliconix Si3424CDV vs. Si3424BDV Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-E3 Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) |
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si3424cdvsi3424bdvsi3424cdv-t1-ge3si3424bdv-t1-e3+2 | |
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Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si3424cdv2002/95/ecsi3424cdv-t1-ge311-mar-11 | |
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Contextual Info: SPICE Device Model Si3424CDV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si3424cdv2002/95/ec2011/65/eujs709a+1 | |
63210Contextual Info: SPICE Device Model Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si3424cdv11-mar-1163210 | |
29791Contextual Info: Si3424CDV-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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si3424cdv-ge3an6093019u0964m+7 | |
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Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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si3424cdv2002/95/ecsi3424cdv-t1-ge32011/65/eu+2 | |
5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
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si4418dy130mohmsi4420bdysi6928dq+12 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 |