SI3424DV Search Results

Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

TSOP-6 .54

Abstract: SI3424DV
Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 6.7 0.038 @ VGS = 4.5 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Ordering Information: Si3424DV-T1

AN609

Abstract: Si3424DV
Contextual Info: Si3424DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3424DV

Contextual Info: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3424DV

Contextual Info: SPICE Device Model Si3424DV N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si3424DV

Abstract: Si3424DV-T1
Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 6.7 0.038 @ VGS = 4.5 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Ordering Information: Si3424DV-T1

Si3424DV

Abstract: Si3424BDV Si3424BDV-T1-E3 Si3424DV-T1 Si3424DV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3424BDV vs. Si3424DV Description: Package: Pin Out: N-Channel 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3424BDV-T1-E3 Replaces Si3424DV-T1-E3 Si3424BDV-T1-E3 Replaces Si3424DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si3424DV

Abstract: 71317
Contextual Info: Si3424DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 6.7 0.038 @ VGS = 4.5 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI3424DV-T1-E3

Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

SI3424DV

Contextual Info: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3424DV

Contextual Info: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI3424DV-T1-E3

Abstract: Si3424DV
Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si3424DV

Abstract: Si3424DV-T1
Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 6.7 0.038 @ VGS = 4.5 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Ordering Information: Si3424DV-T1

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Si4830

Abstract: Fast Switching mosfet SI3433B smd diode 615
Contextual Info: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6

vishay zener diode 1A 30v

Abstract: LM4041CYM3-ADJ VJ0603Y102KXAMT C3216X7R1H106 grm32df51h106za01 VJ0805Y102KXAMT shunt R010 BC846AMTF CDR7D43MN-4R7NC BC846A
Contextual Info: MIC2196 LED Driver Evaluation Board Boost LED Driver w/PWM DIM Control General Description The MIC2196 current mode boost controller is used to implement a LED Driver with PWM DIM control Figure 1 . The LED series string is pulsed on and off by the PWM DIM input signal to provide true PWM dimming. When

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

toshiba c850

Abstract: AT8356908 inverter circuit diagram toshiba a100 PMH6 PTC C851 mouse pan 3504 PAN 3504 toshiba c855 quanta sst 49lf008a bios chip
Contextual Info: A B C Power DC/DC converter BW1 Block Diagram Inverter+15"WXGA&WSXGA Example: 1K/F_4 SVIDEO 3.3V: 2W Jumper SW LCD CON/TV OUT/CRT CRT a b c Clcok Gen. CK410-M ICS954309 ICS954302 Page 14 D CPU P4-M Dothan /Celeron Page 11 E BW1 EXT LOGIC REV: 4A 2005-0902A

AT8356908

Abstract: BD4175KVT quanta 8356908 ATMEL 8356908 inverter circuit diagram toshiba a100 schematic diagram epson r230 BD4175 L43C AC494
Contextual Info: 5 4 DC/DC VCC1R5M & VCC1R05B P59 MAX1540 DC/DC ( VCC1R8M ) MAX1993ETG 3 BV1 ( M-Note ) SYSTEM BLOCK DIAGRAM D VCC1R5B VCC1R05B VCCCPUCORE P56 DDR II SODIMM0 VCC1R8A DDR2_VREF VCC0R9B P50 TSURUMIA BD4175KVT X'TAL 32.768K ( VCC3B & VCC5B & VCC1R8A & VCC1R5B )

MAX8778

Abstract: ECE5021 EMC4001 MEC5025-NU ec isl6236 P26SD mec5025 ICS951463 25VF016 U107D
Contextual Info: A B C D E Battery Charger ISL88731 Parker Block Diagram CPU Clock Generator ICS 951463 U1400 FW289 4 Intel Mobile CPU Yonah / Merom ULV FSB:533Mhz 4 HOST BUS U7500 JW620 +PBATT INPUTS OUTPUTS +PWR_SRC +VCC_CORE System DC/DC DDRII 533/667MHz RS600ME ISL6236/MAX8778