SI3434DV Search Results

Si3434DV

Abstract: Si3434DV-T1-E3 SI3434DV-T1-GE3
Contextual Info: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel

Contextual Info: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V

Si3434DV

Contextual Info: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V

Si3434DV

Abstract: si3434 71652 61A18
Contextual Info: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel

Contextual Info: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel

6456

Abstract: AN609 Si3434DV
Contextual Info: Si3434DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3434DV

Contextual Info: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3434DV

Contextual Info: SPICE Device Model Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel

Si3434DV

Contextual Info: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V

Vishay DaTE CODE tsop-6

Abstract: si3410
Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

95xxx

Abstract: si3434 si3495
Contextual Info: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

dg468dv

Contextual Info: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10  maximum and flatness is 2  max over the specified analog signal range.

Contextual Info: DG447, DG448 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG447, DG448 are dual supply single-pole/single-throw SPST switches. On resistance is 25 W maximum and flatness is 2.2 W max over the specified analog signal range.

Contextual Info: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET

Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see

TSOP 173B

Contextual Info: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition

tsop6 package

Contextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus

Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition