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    SI3585CDV Search Results

    SI3585CDV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3585CDV-T1-GE3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.9A 6TSOP Original PDF 16
    SF Impression Pixel

    SI3585CDV Price and Stock

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    Vishay Siliconix SI3585CDV-T1-GE3

    MOSFET N/P-CH 20V 3.9A 6TSOP
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    DigiKey () SI3585CDV-T1-GE3 Cut Tape 10,293 1
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    SI3585CDV-T1-GE3 Digi-Reel 10,293 1
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    SI3585CDV-T1-GE3 Reel 9,000 3,000
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    Quest Components SI3585CDV-T1-GE3 846
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    New Advantage Corporation SI3585CDV-T1-GE3 6,000 1
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    Vishay Intertechnologies SI3585CDV-T1-GE3

    Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 70AC6501)
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    Avnet Americas () SI3585CDV-T1-GE3 Ammo Pack 1
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    SI3585CDV-T1-GE3 Reel 12 Weeks 3,000
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    Mouser Electronics SI3585CDV-T1-GE3 14,066
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    Verical () SI3585CDV-T1-GE3 12,000 3,000
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    SI3585CDV-T1-GE3 2,295 205
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    SI3585CDV-T1-GE3 50 39
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    Arrow Electronics () SI3585CDV-T1-GE3 12,000 12 Weeks 3,000
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    SI3585CDV-T1-GE3 Cut Strips 50 12 Weeks 1
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    Newark () SI3585CDV-T1-GE3 Reel 24,000 3,000
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    SI3585CDV-T1-GE3 Cut Tape 210 1
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    Bristol Electronics SI3585CDV-T1-GE3 2,990 7
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    Quest Components () SI3585CDV-T1-GE3 2,608
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    SI3585CDV-T1-GE3 2,392
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    SI3585CDV-T1-GE3 665
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    TTI SI3585CDV-T1-GE3 Reel 54,000 3,000
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    TME SI3585CDV-T1-GE3 1,274 1
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    Rutronik SI3585CDV-T1-GE3 Reel 3,000 3,000
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    Avnet Asia SI3585CDV-T1-GE3 10 Weeks 3,000
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    Chip One Stop SI3585CDV-T1-GE3 Cut Tape 2,295 0 Weeks, 1 Days 5
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    EBV Elektronik SI3585CDV-T1-GE3 13 Weeks 3,000
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    IBS Electronics SI3585CDV-T1-GE3 18,000 3,000
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    Vyrian SI3585CDV-T1-GE3 32,454
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    Vishay BLH SI3585CDV-T1-GE3

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    Bristol Electronics SI3585CDV-T1-GE3 270 13
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    Vishay Intertechnologies SI3585CDV-T1-GE3.

    MOSFETs TSOP6 NPCH 20V 3.9A
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    TTI SI3585CDV-T1-GE3. Cut Tape 6,000 25
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    SI3585CDV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si3585CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    Si3585CDV AN609, 9325u 2523u 9146u 1475m 2622u 0053u 7792m 3470m PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original
    Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original
    Si3585CDV 2002/95/EC 11-Mar-11 PDF

    62502

    Contextual Info: SPICE Device Model Si3585CDV www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62502 PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original
    Si3585CDV 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si3585

    Abstract: mosfet 23 Tsop-6 S1217
    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original
    Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3585 mosfet 23 Tsop-6 S1217 PDF

    SI3585DV

    Contextual Info: Specification Comparison Vishay Siliconix Si3585CDV vs. Si3585DV Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs TSOP-6 Identical Part Number Replacements: Si3585CDV-T1-GE3 replaces Si3585DV-T1-E3 Si3585CDV-T1-GE3 replaces Si3585DV-T1-GE3


    Original
    Si3585CDV Si3585DV Si3585CDV-T1-GE3 Si3585DV-T1-E3 Si3585DV-T1-GE3 21-Apr-11 PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original
    Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF