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    SI3585CDV Search Results

    SI3585CDV Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3585CDV-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.9A 6TSOP Original PDF 16
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    SI3585CDV Price and Stock

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    Vishay Intertechnologies SI3585CDV-T1-GE3

    Trans MOSFET N/P-CH 20V 3.9A/2.1A 6-Pin TSOP T/R
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    Verical () SI3585CDV-T1-GE3 3,382 184
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    SI3585CDV-T1-GE3 2,295 11
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    SI3585CDV-T1-GE3 44 36
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    Avnet Americas () SI3585CDV-T1-GE3 Tape & Reel 52 Weeks 3,000
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    SI3585CDV-T1-GE3 Ammo Pack 1
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    Mouser Electronics SI3585CDV-T1-GE3 9,357
    • 1 $1.04
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    Arrow Electronics () SI3585CDV-T1-GE3 Cut Strips 2,295 1
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    SI3585CDV-T1-GE3 Cut Strips 44 52 Weeks 1
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    Newark () SI3585CDV-T1-GE3 Tape & Reel 24,000 3,000
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    SI3585CDV-T1-GE3 Tape & Reel 3,471 100
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    SI3585CDV-T1-GE3 Cut Tape 3,471 5
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    SI3585CDV-T1-GE3 Tape & Reel 3,000
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    SI3585CDV-T1-GE3 Tape & Reel 3,000
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    SI3585CDV-T1-GE3 Tape & Reel 10
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    SI3585CDV-T1-GE3 Cut Tape 1
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    TTI SI3585CDV-T1-GE3 Reel 3,000
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    Bristol Electronics SI3585CDV-T1-GE3 3,260 1
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    Quest Components () SI3585CDV-T1-GE3 2,608
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    SI3585CDV-T1-GE3 2,392
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    SI3585CDV-T1-GE3 665
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    TME SI3585CDV-T1-GE3 3,382 1
    • 1 $0.78
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    Avnet Asia SI3585CDV-T1-GE3 54 Weeks 3,000
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    EBV Elektronik SI3585CDV-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI3585CDV-T1-GE3.

    MOSFETs TSOP6 NPCH 20V 3.9A
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    TTI SI3585CDV-T1-GE3. Cut Tape 6,000 25
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    Vishay Siliconix SI3585CDV-T1-GE3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-193AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3585CDV-T1-GE3 846
    • 1 $0.32
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    Vishay Huntington SI3585CDV-T1-GE3

    Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP
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    Win Source Electronics SI3585CDV-T1-GE3 42,000
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    SI3585CDV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si3585CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si3585cdvan6099325u2523u+69146u1475m2622u0053u7792m3470m PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		si3585cdv2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si3585cdv2002/95/ec11-mar-11 PDF

    62502

    Contextual Info: SPICE Device Model Si3585CDV www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si3585cdv2011/65/eu2002/95/ec12-mar-12+162502 PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si3585cdv2002/95/ec2011/65/eu12-mar-12 PDF

    si3585

    Abstract: mosfet 23 Tsop-6 S1217
    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		si3585cdv2011/65/eu2002/95/ec12-mar-12+3si3585mosfet 23 tsop-6s1217 PDF

    SI3585DV

    Contextual Info: Specification Comparison Vishay Siliconix Si3585CDV vs. Si3585DV Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs TSOP-6 Identical Part Number Replacements: Si3585CDV-T1-GE3 replaces Si3585DV-T1-E3 Si3585CDV-T1-GE3 replaces Si3585DV-T1-GE3


    Original     		si3585cdvsi3585dvsi3585cdv-t1-ge3si3585dv-t1-e3+2si3585dv-t1-ge321-apr-11 PDF

    Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		si3585cdv2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF