SI3585 Search Results
SI3585 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3585CDV-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.9A 6TSOP | Original | 16 | |||
| Si3585DV | Vishay Intertechnology | N- and P-Channel 20-V (D-S) MOSFET | Original | 56.4KB | 7 | ||
| SI3585DV | Vishay Siliconix | N-Channel and P-Channel 20-V (D-S) MOSFET | Original | 57.96KB | 7 | ||
| Si3585DV SPICE Device Model | Vishay | N- and P-Channel 20-V (D-S) MOSFET | Original | 269.49KB | 4 | ||
| SI3585DV-T1 | Vishay Intertechnology | N- and P-Channel 20-V (D-S) MOSFET | Original | 56.4KB | 7 | ||
| SI3585DV-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 2A 6-TSOP | Original | 12 | |||
| SI3585DV-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 2A 6-TSOP | Original | 12 |
SI3585 Price and Stock
Vishay Intertechnologies SI3585CDV-T1-GE3Trans MOSFET N/P-CH 20V 3.9A/2.1A 6-Pin TSOP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3585CDV-T1-GE3 | 3,382 | 184 |
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| SI3585CDV-T1-GE3 | 2,295 | 11 |
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| SI3585CDV-T1-GE3 | 44 | 36 |
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SI3585CDV-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI3585CDV-T1-GE3 | 9,357 |
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SI3585CDV-T1-GE3 | Cut Strips | 2,295 | 1 |
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| SI3585CDV-T1-GE3 | Cut Strips | 44 | 52 Weeks | 1 |
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SI3585CDV-T1-GE3 | Tape & Reel | 24,000 | 3,000 |
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| SI3585CDV-T1-GE3 | Cut Tape | 3,421 | 5 |
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| SI3585CDV-T1-GE3 | Tape & Reel | 3,421 | 100 |
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| SI3585CDV-T1-GE3 | Tape & Reel | 3,000 |
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| SI3585CDV-T1-GE3 | Tape & Reel | 3,000 |
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| SI3585CDV-T1-GE3 | Tape & Reel | 10 |
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| SI3585CDV-T1-GE3 | Cut Tape | 1 |
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SI3585CDV-T1-GE3 | Reel | 3,000 |
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SI3585CDV-T1-GE3 | 3,260 | 1 |
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SI3585CDV-T1-GE3 | 2,608 |
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| SI3585CDV-T1-GE3 | 2,392 |
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| SI3585CDV-T1-GE3 | 665 |
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SI3585CDV-T1-GE3 | 3,382 | 1 |
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SI3585CDV-T1-GE3 | 54 Weeks | 3,000 |
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SI3585CDV-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Siliconix SI3585DV-T1-E3MOSFET, DUAL, 20V, 2.4/1.8A, TSOP-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3585DV-T1-E3 | Bulk | 3,000 |
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SI3585DV-T1-E3 | 559 |
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SI3585DV-T1-E3 | 32 |
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Vishay Intertechnologies SI3585CDV-T1-GE3.MOSFETs TSOP6 NPCH 20V 3.9A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3585CDV-T1-GE3. | Cut Tape | 6,000 | 25 |
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Vishay Intertechnologies SI3585DV-T1Trans MOSFET N/P-CH 20V 2A 6-Pin TSOP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3585DV-T1 | 806 |
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Vishay Siliconix SI3585CDV-T1-GE3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-193AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3585CDV-T1-GE3 | 846 |
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SI3585 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si3585CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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si3585cdvan6099325u2523u+6 | |
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Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see |
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si3585cdv2002/95/ec2011/65/eujs709a+1 | |
7636 mosfet
Abstract: AN609 Si3585DV
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si3585dvan60903-may-077636 mosfet | |
Si3585DVContextual Info: Si3585DV New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 |
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si3585dvs-00982--rev15-may-00 | |
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Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
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si3585cdv2002/95/ec11-mar-11 | |
Si3585DV
Abstract: 03512
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si3585dvs-03512--rev04-apr-0103512 | |
SI3585DV
Abstract: SI3585DV-T1-E3
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si3585dv2002/95/ecsi3585dv-t1-e3si3585dv-t1-ge3+2 | |
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Contextual Info: Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 0.200 at VGS = - 4.5 V - 1.8 0.340 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 |
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si3585dv2002/95/ecsi3585dv-t1-e3si3585dv-t1-ge3+1 | |
62502Contextual Info: SPICE Device Model Si3585CDV www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si3585cdv2011/65/eu2002/95/ec12-mar-12+1 | |
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Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
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si3585cdv2002/95/ec2011/65/eu12-mar-12 | |
Si3585DVContextual Info: Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 S2 TSOP-6 Top View |
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si3585dv18-jul-08 | |
Si3585DV
Abstract: Si3585DV-T1-E3 Si3585DV-T1-GE3
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si3585dv2002/95/ecsi3585dv-t1-e3si3585dv-t1-ge3+1 | |
si3585
Abstract: mosfet 23 Tsop-6 S1217
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si3585cdv2011/65/eu2002/95/ec12-mar-12+3 | |
SI3585DVContextual Info: Specification Comparison Vishay Siliconix Si3585CDV vs. Si3585DV Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs TSOP-6 Identical Part Number Replacements: Si3585CDV-T1-GE3 replaces Si3585DV-T1-E3 Si3585CDV-T1-GE3 replaces Si3585DV-T1-GE3 |
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si3585cdvsi3585dvsi3585cdv-t1-ge3si3585dv-t1-e3+2 | |
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Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see |
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si3585cdv2002/95/ec2011/65/eujs709a+1 | |
Si3585DVContextual Info: SPICE Device Model Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si3585dv18-jul-08 | |
Si3585DVContextual Info: SPICE Device Model Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si3585dv09-apr-03 | |
Si3585DVContextual Info: SPICE Device Model Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si3585dvs-50836rev16-may-05 | |
Si3585DVContextual Info: Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 S2 TSOP-6 Top View |
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si3585dv08-apr-05 | |
5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
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si4418dy130mohmsi4420bdysi6928dq+12 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |