FL235BQS Search Results

Q67006-A9171

Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Contextual Info: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible

Contextual Info: SIEMENS PNP Silicon AF Transistors SMBTA 55 SMBTA 56 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 05, SMBTA 06 NPN Type Marking Ordering Code (tape and reel) PinC:onflgur ation 1 2 3 Package1) SMBTA 55

ras 0910

Abstract: BUZ47A C67078-A1604-A2 KDS - 5A
Contextual Info: aa» » • a 23SbQS o o m t i a b ■ _ s i EG 8 8D 14618 D 'p '" ^<7 BUZ47A SIEMENS AKTIENGESELLSCHAF -Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case VD3 /„ = 500 V = 3,9 A floS on “ 2,0 iî

BFQ70

Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

EM 4093

Contextual Info: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )

Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5

Contextual Info: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )

fopf

Abstract: ob35l0s a 3116 HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3118160BSJ-50 HYB3118160BSJ-60 HYB3118160BSJ-70 71ST5
Contextual Info: S IE M E N S 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation Output unlatched at cycle end allows tw o ­ dim ensional chip selection Read, write, read-m odify-write, CAS-before-RAS refresh, RAS-only refresh,

siemens b 58 468 la intel 80

Abstract: siemens "b 58 468" la intel 80 siemens MFAB alco ff 4-4 dah PEB2055n CDS2C MOD1024 siemens b 58 468 la intel 80 0/siemens "b 58 468" la intel 80
Contextual Info: SIEMENS Extended PCM Interface Controller EPIC PEB 2055 CMOS 1C Preliminary Data 1 Introduction 1.1 Features * Board Controller for up to 32 ISDN or 64 voice subscribers * Nonblocking switch tor 128 channels (16.32. or 64 kbps bandwidth) * Two consecutive 64 kbps channels can be switched as a single 128 kbps channel.

Contextual Info: SIEMENS BUZ 1 0 L Not for new design SIPMOS Power transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 1 0 L Vbs 50 V 1D ^DS on Package Ordering Code 23 A 0.07 Q TO-220 AB C67078-S1329-A2 Maximum Ratings Continuous drain current

BC 148 transistor

Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Contextual Info: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

Contextual Info: SIEMENS PEB 20550 PEF 20550 Overview 1 Overview The PEB 20550 Extended Line Card Controller is a highly integrated controller circuit optimized for line card and key system applications. It combines all functional blocks necessary to manage up to 32 digital (ISDN or proprietary) or 64 analog subscribers.

dda09

Abstract: siemens 286
Contextual Info: 47E SIEM EN S » • ñ23SbOS SIEMENS GDaasm 7 «SIEG AKTIENGESELLSCHAF ^ •5 2 -3 3 -1 ^ SAB 82C257 Advanced DMA Controller for 8-/16-Bit Microcomputer Systems 10MHz Advanced Information • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166/83C166 • • • • • • • • • • • • • • • • • • • • • • • • • • SAB 80C166/83C166 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline

MIP211

Abstract: LSC series Microcontroller by MOTOROLA 007011 siemens Motorola LSC microcontroller ITP05590 siemens modules GR 60 48 V 120 A dtmfgenerator B2M marking Q67100-H6458 converter siemens modules GR 60 48 V 120 A
Contextual Info: SIEMENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2163 Preliminary Data BICMOS-IC 1 • • • • • • • • • • • • • • • • • • • • Features Applications in digital terminal equipment featuring voice

siemens igbt BSM 75 gb 100

Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
Contextual Info: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

transistor BD 680

Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Contextual Info: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors

smd diode g5 zener

Abstract: smd JS siemens air temperature sensors smd diode g5 BTS933 E3043 E3062A zener diode BN Q67060-S6701-A2 Smart 700 SIEMENS
Contextual Info: SIEMENS HITFET BTS933 Smart Lowside Power Switch Features • • • • • • • • • Product Summary Logic Level Input Continuous drain source Input protection ESD On-state resistance Thermal shutdown Current limitation Overload protection Load current (ISO)

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

44e 402

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 5116160BSJ-50/-60/-70 Advanced Inform ation • • • • • 1 048 576 w ords by 16-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

utc 3845 D

Abstract: utc 3845
Contextual Info: SIEM ENS VPS / PDC-plus D ecoder SDA 5650/X CMOS 1 General Description The PDC plus SDA 5650 decoder chip receives all VPS and 8/30 Format 1 and 2 data together with the teletext header information for easy identification of broadcast transmitter. The SDA 5650 includes a

Contextual Info: SIEMENS TEMPFET BTS 129 Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type Vos BTS 129 60 V h 27 A 1 2 3 G D S RoSion Package Ordering Code 0.05 £2