2SB948
Abstract: 2SB948A
Contextual Info: JMnic Product Specification 2SB948 2SB948A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1445/1445A ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications
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2sb9482sb948ao-220fa2sd1445/1445a+110mhz
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2SB0948
Abstract: 2SB0948A 2SB948 2SB948A 2SD1445 2SD1445A
Contextual Info: Power Transistors 2SB0948, 2SB0948A 2SB948, 2SB948A Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SB0948 Collector to emitter voltage 2SB0948 Symbol Rating Unit VCBO −40 V 16.7±0.3
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2sb09482sb0948a2sb9482sb948a+4sc-67o-220f-a12sd14452sd1445a
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2SB948
Abstract: 2SB948A 2SD1445 2SD1445A
Contextual Info: Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 and 2SD1445A Unit: mm • Absolute Maximum Ratings Parameter Collector to base voltage 2SB948A Collector to 2SB948 Ratings –40 VCBO –50
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2sb9482sb948a2sd14452sd1445a+1100ma
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching
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2002/95/ec2sb09482sb9482sb0948a+12sb948a
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching
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2002/95/ec2sb09482sb9482sb0948a+12sb948a
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2SB948
Abstract: TC 30i 2SB948A
Contextual Info: Power Transistors 2SB948, 2SB948A 2SB948, 2SB948A Silicon PNP Epitaxial Planar Type Low Voltage Switching Package Dimensions . • Features • • Low collector-em itter saturation voltage Vceîsm • High speed switching , • , • “Full Pack” package for simplified m ounting on a h eat sink w ith one
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2sb9482sb948a-30i-ir2sb951/a+1tc 30i
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2SB948
Abstract: 2SB948A
Contextual Info: Power T ransistors 2SB948, 2SB948A 2SB948, 2SB948A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching I I Features • Low collector-em itter saturation voltage Vce<sm • High speed switching • “Full P ack” package for simplified m ounting on a heat sink w ith one
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2sb9482sb948ata-25r--20v |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching • Features 4.2±0.2 5.5±0.2 2.7±0.2 16.7±0.3 7.5±0.2 M Di ain sc te on na
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2SB0948
Abstract: 2SB0948A 2SB948 2SB948A
Contextual Info: Power Transistors 2SB0948 2SB948 , 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
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2sb09482sb9482sb0948a2sb948a |
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2SB0948
Abstract: 2SB0948A 2SB948 2SB948A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.5±0.2 2.7±0.2
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b0246
Abstract: PH2955T 045H2 SMCP055 SGS-Ates B0246A B0-246 MJE2955T ST MJE2901K MJE2955K
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 SOT3805 SOT3825 SOT3825 SOT3825 SOT3105 SOT3115 SOT3125 ST29051 ~gH~g~ 35 40 SOT3807 SOT3827 SOT3827 SOT3827 2SB871A 2SB936A 2SB948A 2SB896A ~~~~~~~ 45 50 SK3183 BOW22 B0664 B0664 B0246 B0206
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ot3116ot3126mje2901mje2901k+13mje2901t2n37892n3791b0246ao-111b0246ph2955t045h2smcp055sgs-atesb0-246mje2955t stmje2955k
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IC 1405
Abstract: 2SB0948 2SB0948A 2SB948 2SB948A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.5±0.2 2.7±0.2
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2002/95/ec2sb09482sb9482sb0948a+22sb948aic 1405
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2SB948A
Abstract: 2SB948
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB948 2SB948A DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1445/1445A ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For low-voltage switching applications
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2sb9482sb948ao-220fa2sd1445/1445a+110mhz
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2SB948
Abstract: 2SB948A
Contextual Info: Inchange Semiconductor Product Specification 2SB948 2SB948A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1445/1445A ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications
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2sb9482sb948ao-220fa2sd1445/1445a |
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2SB0948
Abstract: 2SB0948A 2SB948 2SB948A 2SD1445 2SD1445A
Contextual Info: Power Transistors 2SB0948, 2SB0948A 2SB948, 2SB948A Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB0948 Collector to emitter voltage 2SB0948 Rating −40 VCBO −20 VCEO 4.2±0.2
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2sb09482sb0948a2sb9482sb948a+4sc-67o-220f2sd14452sd1445a
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SA1015
Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624
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2sb10372sb649a2sb1186a2sa1306a+132sb1186b2sb5482sb13142sa17832sa10152sa7332sa10912sa13712sa562tm2sb8142sa12432sb6422sb793
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mw2sc46272sc50212sa1790+162sc46262sc46552sc48092sc52952sc48082sa1806d2375d1259ad1267ad1265atransistor 2sa19492sd2328atransistors selection guided1261ac37952sb1526
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2SB962
Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»
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2sb938a2sb9392sb939a2sb940+102sb940a2sb9412sb947a2sb951a2sb9522sb952a2sb9622sd12882sb941a2sb942
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B948A
Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M
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rn20q2dta114es2sa16692sa1245+142sa17682sb14732sa12842sb1130m2sa17032sb793b948a2sa17572sa16362sa14442sa14622sa13072sa1637nec 1441
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2SA1441
Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
Contextual Info: 32 - tt 2 SA 1465 0 a 2SA 1466 B 2SA 1467 i ED M £ T y p e No. m 146 8 € Manuf. H » S ANYO 2SB698 2SA 2 SA 2SA 1471 1 474 1 47 5 1 47 6 = •;# ^ ^ = n ^ = # ft 2SA 1477 = 3 2SA 1478 = ;¥ H. ft 2SA 1479 2SA 1480 - ✓ J 2SA 1481 2SA 1482 2SA 1485 2 SA 1487
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2sb6982sa9502sa15152sa1150+152sa1515s2sa12982sb1197k2sa12572sa13302sb7922sa14412sa1441 nec2sa11152sa12632sa12322sa11422sa13102sa10182sa1624
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2SA1441
Abstract: 2sb1340 2SA1712 2SA1763 2SB1020 2SB921 2SA1516 1729H 2SA1156 2SA1639
Contextual Info: 39 tt 2SA 2 SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2SA 2S A 2S A 2S A 2S A 2SA 2SA 2SA 2SA 1715 1716 1717 171 8 1719 1 720 1721 1722 1723 1725 1 726 1727 172 8 1729 1730 1731 1732 1733 1734 1735
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2sb12272sa17182sb11942sb1340+132sb12282sb10202sa17192sb11952sb13442sa14412sa17122sa17632sb9212sa15161729h2sa11562sa1639
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2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
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2sb9012sb9022sb9032sb904+132sb9052sb9062sb9072sb9082sb9092sb9102sb9712sb9782sb9112sb9172sb9182sb9832sd1347
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