2SB183 Search Results

Contextual Info: 2SB183060MA 2SB183060MA 肖特基二极管芯片 描述 Ø 2SB183060MA是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

silan

Abstract: Silan Semiconductors top metal
Contextual Info: 2SB183040ML 2SB183040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB183040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

2SB1832

Abstract: 2SB1292
Contextual Info: Transistors 2SB1292 2SB1832 94L-316-B75 (94L-872-D75) 286

2SD1632

Abstract: 2SB1832 2SD1832 2SB1292
Contextual Info: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V c e (bbi). (T yp.— 0 . 3 V at I c / I b = - 3 / - 0 . 3 A ) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0W (T c = 2 5 °C ) 4 ) W ide SO A (safe operating area).

Contextual Info: 2SB183100MA 2SB183100MA 肖特基二极管芯片 描述 Ø 2SB183100MA是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

Contextual Info: 2SB183100MA 2SB183100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

2SB1832

Abstract: 2SD1832 PSD3-10 2SB1292 SC-75A
Contextual Info: 2SB1292 2SB1832 Transistors Power Transistor —60V, —5A 2SB1292 I •A b s o lu te maximum ratings (T a *s25'C) •F e a tu re s 1 ) Low VcE<Mt). (T y p .-0 .3 V at Ic/Ib = —3 /-0 .3 A ) 2 ) Excellent DC current gain characteristics. 3 ) P c - 3 0 W ( T c = 2 5 r>

Contextual Info: 2SB183060MA 2SB183060MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183060MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB183100MA 2SB183100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB183100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

Contextual Info: 2SB183060MA 2SB183060MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

D1832

Abstract: transistor d1832 D1832 TRANSISTOR d 1832 B1292 B-1292
Contextual Info: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V cE (saf)- (Typ.-—0.3V a t 1c /I b = — 3 /—0.3A) •A b s o lu te maximum ratings (T a = 2 5 =C ) P ara m e te r 2 ) Excellent D C current gain characteristics.

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SB187

Abstract: 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* hFE Ic (ºC) VCE(V) (MHz) (mA) Pc Tj (mA) (mW) Cob (pF) 2SB101 -30 -10 -50 125 75 1.2 2SB102 -30 -10 -50 180 75 1.2 2SB103 -30

OC615

Abstract: 2N1402 AFY34 OC614 TIXM103 2T201 2N33 0C330 2N38A A 14U
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any