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    2SB105 Search Results

    2SB105 Datasheets (95)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SB105
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 38.46KB 1
    2SB105
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 81.43KB 1
    2SB105
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 46.04KB 1
    2SB105
    Unknown Cross Reference Datasheet Scan PDF 34.22KB 1
    2SB105
    Unknown The Japanese Transistor Manual 1981 Scan PDF 110.79KB 2
    2SB105
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 170.6KB 2
    2SB105
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.3KB 1
    2SB105
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 93.57KB 1
    2SB105
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 35KB 1
    2SB1050
    Panasonic Silicon PNP epitaxial planer type Original PDF 56.7KB 3
    2SB1050
    Panasonic PNP Transistor Original PDF 47.02KB 3
    2SB1050
    Panasonic Silicon PNP epitaxial planer type Original PDF 36.77KB 2
    2SB1050
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SB1050
    Unknown Japanese Transistor Cross References (2S) Scan PDF 39.41KB 1
    2SB1050
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 105.17KB 2
    2SB1050
    Unknown Transistor Substitution Data Book 1993 Scan PDF 36.3KB 1
    2SB1050
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 127.7KB 1
    2SB1050
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 42.89KB 1
    2SB1050P
    Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF 75.72KB 3
    2SB1050Q
    Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF 75.72KB 3
    SF Impression Pixel

    2SB105 Price and Stock

    Panasonic Electronic Components

    Panasonic Electronic Components 2SB1052

    TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),SOT-186
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    Quest Components 2SB1052 35
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    2SB105 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1052

    Abstract: 2SD1480 IC 4090
    Contextual Info: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION


    Original
    2sb1052o-220fa2sd1480ic 4090 PDF

    2SB1055

    Abstract: 2SD1486
    Contextual Info: JMnic Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original
    2sb10552sd1486-120v-20ma PDF

    2SB1052

    Abstract: 2SD1480 8MA11
    Contextual Info: Power T ransistòrs 2SB1052 2SB 1052 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1480 • Features . • High DC c u rre n t gain I i f e and good linearity • Low collector-eim itter saturation voltage (VcEcsao)


    OCR Scan
    2sb10522sd1480b13efl550qlbs13+18ma11 PDF

    2SB1052

    Abstract: 2SD1480
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1480 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1


    Original
    2sb1052o-220fa2sd1480 PDF

    2SD1488

    Abstract: 2SB1057
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1057 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications


    Original
    2sb10572sd1488-150v-20ma PDF

    2SB1056

    Abstract: 2SD1487
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications


    Original
    2sb10562sd1487-140v-20ma PDF

    Contextual Info: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) 4.5±0.1 2.0±0.2 R 0.9 R 0.7 3.5±0.1 (1.5) 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud


    Original
    2sb1050 PDF

    Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original
    2sb10542sd1485 PDF

    Contextual Info: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 10.0±0.2 0.7±0.1 Features 4.2±0.2 5.5±0.2 2.7±0.2 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original
    2sd14802sb1052 PDF

    2SD1488

    Abstract: 2SB1057 7A20 33SI 2sB105
    Contextual Info: 2SD1488 2 SD 1 4 8 8 U H V NPN /' —•^■Jl^/Si N P N T rip le D iffused P lanar Power Amplifier i] /'Complementary Pair with 2SB1057 U n it : mm 5 .2 m a x . 2SB1057 4 ~ ■ # n d> CM it/F e a tu r e s ■X 3§ L 4J* -1 o • £ k , ¡ t S t S i X i f 1 > ii£ h FE


    OCR Scan
    2sd14882sb105733-si/hfe27a20+233si2sb105 PDF

    2SB1055

    Abstract: 2SD1486
    Contextual Info: Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original
    2sb10552sd1486 PDF

    2SD1480

    Abstract: 2SB1052
    Contextual Info: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original
    2sd14802sb1052 PDF

    2SB1050

    Contextual Info: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as


    Original
    2sb1050 PDF

    2SB1054

    Abstract: 2SD1485
    Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current


    Original
    2sb10542sd1485 PDF

    2SB1051K

    Abstract: T146 T147 2sb1051
    Contextual Info: h ÿ "yv7> £ /Transistors 1 1 2SB1051K Epitaxial Planer PNP Silicon Transistor fô ll'/& S :friitiffl/L o w Freq. Power Amp. * ÿfft^i& lll/D im en sio n s Unit : mm IC = 1 A 2) V c E l s a t ) ^ ' » VCE ( s a t ) = - 0 2 V (T yp.) (lc /lB = -5 0 0 m A /-5 0 m A )


    OCR Scan
    2sb1051k-500ma/-50masc-5910x10-+3t146t1472sb1051 PDF

    2SD1487

    Abstract: 2SB1056
    Contextual Info: JMnic Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original
    2sb10562sd1487-140v-20ma PDF

    Hitachi DSA002754

    Contextual Info: 2SB1059 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1490 Outline 2SB1059 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage


    Original
    2sb10592sd1490hitachi dsa002754 PDF

    Contextual Info: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as


    Original
    2sb1050 PDF

    2SB1054

    Abstract: 2SD1485
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original
    2002/95/ec2sd14852sb1054 PDF

    2SB1054

    Abstract: 2SD1485
    Contextual Info: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original
    2sd14852sb1054 PDF

    2SB1054

    Abstract: 2SD1485
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original
    2002/95/ec2sd14852sb1054 PDF

    2SB1054

    Abstract: 2SD1485
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2


    Original
    2002/95/ec2sb10542sd1485 PDF

    2SB1050

    Abstract: 2sB105
    Contextual Info: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature


    Original
    2sb10502sb105 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2


    Original
    2002/95/ec2sb10542sd1485 PDF