2SB102 Search Results

Contextual Info: 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. I Q 3 MAX. 7.0 FEA TU R ES: . High DC Current Gain: hpE=2000(Min.) (at V c e =-3V, Ic =-3A

2SD1414

Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SB1024
Contextual Info: Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications

2SB1020

Abstract: 2SD1415
Contextual Info: JMnic Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications

2sd1417

Abstract: 2SB1022 2sB102
Contextual Info: Inchange Semiconductor Product Specification 2SD1417 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications

2SD1415

Abstract: 2SB1020 3A 100V npn LOW SATURATION VOLTAGE
Contextual Info: Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications

B1020A

Abstract: 2SB1020A 2SD1415A
Contextual Info: 2SB1020A シリコンPNP三重拡散形 ダーリントン接続 東芝トランジスタ 2SB1020A 通 信 工 業 用 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −3 V, IC = −3 A)

2SD1415

Abstract: 2SB1020 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications

2SB1022

Abstract: 2SD1417
Contextual Info: SavantIC Semiconductor Product Specification 2SB1022 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1417 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SD1413

Abstract: 2SB1023 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1413 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications

2SB1024

Abstract: 2SD1414
Contextual Info: SavantIC Semiconductor Product Specification 2SB1024 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1414 APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

2SB1025

Abstract: 2SB1026 2SD1419 DSA003775
Contextual Info: 2SB1026 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1419 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SB1026 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

Hitachi DSA0076

Abstract: 2SB1027
Contextual Info: 2SB1027 Silicon PNP Epitaxial ADE-208-1038 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1027 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SD1418

Abstract: Hitachi DSA002756
Contextual Info: 2SD1418 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1025 Outline 2SD1418 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

Hitachi DSA0076

Abstract: 2SB1028
Contextual Info: 2SB1028 Silicon PNP Epitaxial ADE-208-1039 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1028 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1020A

Abstract: 2SD1415A
Contextual Info: TO SH IBA 2SB1020A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1020A HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.3 • High DC Current Gain : hFE = 2000 (Min.) (at VnE = -3 V , IC = -3 A )

T0220

Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254

B1020A

Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)

2SB1026

Abstract: 2SB1026DMTL-E 2SD1419
Contextual Info: 2SB1026 Silicon PNP Epitaxial REJ03G0662-0200 Previous ADE-208-1037 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1419 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

B1020A transistor

Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)

Contextual Info: Product specification 2SB1026 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -5 V IC -1 A iC peak *1

2SD1413

Abstract: 2SB1023
Contextual Info: JMnic Product Specification 2SB1023 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1413 APPLICATIONS ・Power amplifier and switching applications ・Hammer drive,pulse motor drive applications

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1021 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _ Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. rfl/ Àf 03.Z±O.2 MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

2SB1023

Abstract: 2sB102
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB1023 DARLINGTON POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nun HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 03.2±CX2 1/ - ri—i o ] Jri ^ 05 f Ö *J col 4-! O 7.0 J FEATURES: