2SB108 Search Results

2SB1086A

Abstract: 2SD1563A
Contextual Info: Inchange Semiconductor Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency

2SB1086

Abstract: 2SD1563
Contextual Info: JMnic Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1089

Abstract: 2SD1567
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1089 DESCRIPTION •High Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -2A ·Complement to Type 2SD1567 APPLICATIONS ·Designed for power supplies or a variety of drives in audio

2SB1086

Abstract: 2SD1563
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 APPLICATIONS ·Designed for low frequency power amplifier applications.

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

Contextual Info: ROHM CO LTD - MOE D 000SS3T h 7 > y X ^ / T ransistors 2SB1085 — 2SB11 ^ BBRHF1 PNP y >J□ > ' 1T -3 3 - / ^ h7>y'z$ fi£J§5j£11>^^ffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • íl-Jfé \f-;£ !3 /'D im e n s io n s U n it: mm

2SB1085

Abstract: 2SD1562
Contextual Info: Inchange Semiconductor Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications

silan

Contextual Info: 2SB108040AML 2SB108040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB108040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability;

Contextual Info: 2SB1086A / T ransistors PNP y ' J ^ > fiH ? l& tS ^ iifllffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ^i-}fi\f>±0/D im en sio n s U n it: mm 1) m M I Z T & Z (B V c e o = -1 6 0 V )„ 2) A s o * > 'E : < a i c ? i t 'o 3) 2SD1563A£ □

Contextual Info: Iv 7 > y ^ £ /Transistors 2SB1086 PNP v U n > h 7 > v 'X ^ 2 S B 1 8 6 I S J i i l f c l ^ M / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • 1 5 \t ii0 /D im e n s io n s Unit : mm) (B V c e o = - 1 2 0 V ) o 2) 3) 2 S D 1 5 6 3 t z i> y U T ' * 5 „

d1563a

Contextual Info: 2SB1086A Is ~7 > ' / X $ /Transistors o q r i 8 6 A Epitaxial Planar PNP Silicon Transistor iililfc S ^ iS llffl/L o w Freq. Power Amp. • v tiilH /D im en sio n s U nit: mm 2.5±0.2 r 1 BVc eo = -1 6 0 V & 2) S O A f r 'E i- 'o 3) 2SD1563At = I> 7 U T '& 3 0

2SB1085A

Abstract: 2SD1562A
Contextual Info: JMnic Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

2SB1086A

Abstract: 2SD1563A
Contextual Info: JMnic Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SD1565

Abstract: 2SB1087
Contextual Info: Inchange Semiconductor Product Specification 2SD1565 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Complement type 2SB1087 APPLICATIONS ・For low frequency power amplifier and power switching applications

Contextual Info: F ~7 > v ^ $ /Transistors 2 S D 2SD1563A 1 5 6 3 A ^ ^ ^ v t v - ^ npn Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ /D im e n s io n s U n it: mm (BVCEO= 160 V ) o 2) A S O ^ K < « a i ; ? l i t ' 0 3) 2SB1086A £ 3 > ') X' & -5 „ 4) S fc ift& 'v W K tttt

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

2SB1085

Abstract: 2SD1562
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1562 APPLICATIONS ·Designed for low frequency power amplifier applications.

2SB1085A

Contextual Info: 2SB1085A h ~p > y X £ /T ra n s is to rs 9 C D 4 8 5 A I ^ + ' > 7 ^ 7 pU - ^ P N P y 'J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor filÜ S ^ ^ lS 'U ffl/L o w Freq. Power Amp. • W Ï& r j- ^ i a / D im e n s i o n s Unit : mm 1) S W E E T ' * * (B V Ce o = - 1 6 0 V ) o

nec 2sd381

Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A

2SB1085A

Contextual Info: S "7 > v 7, £ /Transistors 2SB1085A PNP '> ';= !> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • &M : • i>|.JfiT|-;£|I]/Dim ensions U n it: mm 1) 7 i . 5 (BVC e o = - 1 60V )o 2) A S O A 'l l 'o 3 ) W l i < , C o b A ^ J ^ l ' o 4) 2 S D 1 5 6 2 A t = J > y j T i > 5 o

Contextual Info: 2SB1085 / T ransistors i W + y W l ' -fls—m PNP '>•;=!> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • T T /ilH / Dimensions U n it: mm 1) ¡ S t E ? <£>-3 (B V CEo = - 1 2 0 V ) o 2) A S O t f £ ^ „ 3 ) f r A 4 < , C o b W 'S l'o

Contextual Info: 2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB108100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

2SD1563A

Abstract: 2SB1086A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1563A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V min APPLICATIONS ·For low frequency power amplifier

2SB1086

Abstract: 2SD1563
Contextual Info: SavantIC Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1563 ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency