2N5620 Search Results

Contextual Info: 2N5620 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5614

Abstract: 2N5616 2N5618 2N5620
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications

5618

Abstract: 2N5614 2N5616 2N5618 2N5620
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION •With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications

2N5620

Contextual Info: 2N5620 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

2N5385

Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2N5004 ppc

Abstract: JANTX2N5664 2N7373
Contextual Info: Microsemi NPN Transistors Part Number JANS2N5664 JANTX2N5664 JANTXV2N5664 ! 2N5665 JAN2NS665 JANS2N5665 JANTX2N5665 JANTXV2N5665 2N7374 2N7375 2N5614 2N5002 2N5004 2N5616 2N5618 2N7373 JAN2N5002 JAN2NS004 JANS2N5002 JANS2N5004 JANTX2N5002 JANTX2N5004 JANTXV2N5002

2N3026

Abstract: 2N3025 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150
Contextual Info: I _ 12 E tljíJ E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 TO 111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

2N3021

Abstract: 2N3025 2N3026 2N5076 TO111 package 2N5002 2N5004 2N5074 2N5075 2N5077
Contextual Info: 12 u l í u ELECTRONICS, INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 T0111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5 TO-66 TO-66 TO-66

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N5532

Abstract: 2N5076 2N5529 SDR2710 2n5430 2N5530 2N5527 2N5528 2N5531 2N5533
Contextual Info: 9 RADIATION RESISTANT TRANSISTORS CU R R E N T G A IN TYPE NUM BER CASE TYPE V CEO V V CBO V V EBO V hFE M IN . | M A X . CE V S A T U R A T IO N VO LTAG ES 'c A V CE s V V BE(s) V <8> 'c A 5 AMP RADIATION Mi’N 2N5527 2N5531 SDR2710 TO-5 TO-5 MT-27 60 90

2n5480

Contextual Info: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111

Contextual Info: SEMELAB LTD A133167 Q00Q02S 1 agMwpEjr 1» nitii "type No. 2N5480 2N5490 2N5491 2N5492 2N5493 2N5494 2N5495 2N5496 2N54 97 2N5498 Reliability Option HI-REL SCREEN Polarity Package VCEO •c cont n "’ 1^iHwwg " j.v'ri;m ifiiirttt hFE@ VCE/*C »T Pd 7 7 7

2N5133

Abstract: 2N6030 2N4922 npn 2N5136 TP220 transistor 2N4918 2N5042 2N5143 2N6276 2N6278
Contextual Info: ADVANCED 02 SEMICONDUCTOR DE POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP NPN PNP PNP PNP NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN PNP PNP NPN NPN PNP PNP PNP PNP NPN

2N3184

Abstract: 2N3185 2N3186 2N3195 2N3196 2N3198
Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N5076

Abstract: 2N5336
Contextual Info: 19 SILICON POWER TRANSISTORS CURREI* JT G A IN TYPE NUMBER CASE TYPE V CBO V V EBO I V I V V CEO h FE M IN . I M A X . V V SA TU R A TIO P 0 V O LT A G E S 'c A V CE s V BE(s) V I V 'c A 'b I A 5 AMP SILICON NPN 2N4300 2N4305 2N4307 TO-5 TO-5 TO-5 100 120

2N6258

Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Contextual Info: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN