2N5407 Search Results

Contextual Info: 2N5407X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

Contextual Info: 2N5404 2N5405 2N5406 2N5407 MECHANICAL DATA Dimensions in mm SMALL SIGNAL PNP TRANSISTORS IN TO-5 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. Small signal PNP transistors for relay

2N5406

Abstract: 2N5404 2N5405 2N5407
Contextual Info: 2N5404 2N5405 2N5406 2N5407 MECHANICAL DATA Dimensions in mm SMALL SIGNAL PNP TRANSISTORS IN TO-5 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. Small signal PNP transistors for relay

2N5407

Contextual Info: ISCFdÈЪj Ъj text/html About News keyword search: Employment Site Home part number search: 2N5407 #23812 RFQ/Sample Package TO-5(STD) PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating

2N5286 DATASHEET

Abstract: 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5605 2N5607 2N5609 2N5611 2N5613 2N5615 2N5617 2N5619 2N6190 2N6192 SDT3301 SDT3302 SDT3303 SDT3304

Contextual Info: 2N5407X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

2N5415

Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o 2N5338 CECC 2N5338X 2N5339 2N5339 CECC 2N5339X 2N5344 2N5344A 2N5345 2N5345A 2N5357 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5411A 2N5414 2N5415 2N5415 CECC 2N5415CSM4 2N5416

2N5407X

Contextual Info: 2N5407X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

2N5404

Abstract: 2N5405 2N5406 2N5407 PNP 100V 2A
Contextual Info: 2N5404 2N5405 2N5406 2N5407 SMALL SIGNAL PNP TRANSISTORS IN TO-5 MECHANICAL DATA Dimensions in mm 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 38.1 (1.500) min. 0.89 max. (0.035) APPLICATIONS 7.75 (0.305) 8.51 (0.335) dia. Small signal PNP transistors for relay

JANS2N5416

Abstract: JANTX2N3868 2N3202 2N3203
Contextual Info: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416

2N5287

Abstract: 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5322 2N5323 2N5333
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRE A K D O V SAT V O L T A GES M e X. h FE V( D L TAG E S PNP CASE V CE V EB (V) >C (A) M in . Max. 'c (A) 'b (A) V CE (V) V BE V CB 2N5287 TO-59/I 120 100 5.5 5 2.5 70 20 0 2.5 0.5 1.5 Z. 2N 5290 T O -61/1

2N54115

Abstract: 2N5286 2N3023
Contextual Info: ^ pF | 613Mb&#39;i3 □□□□155 7 | "T'-<^ 7-Q | NPN SILICON POWER TRANSISTORS Cont’d 8134693 SEMICQA Maximum Ratings Device Dissipation Type No. @25°C ic VCB (Cont.) NPN Volts (Case) Amps Watts 30 120 2N6271 100 30 120 2N6273 100 30 110 2N5933 175 30

2n5253

Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321

Transistors 2n551

Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N3920

Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
Contextual Info: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N3183

Abstract: 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203
Contextual Info: COLLECTOR CURRENT = 5 AMPS PNP TYPES— Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N3178 2N3183 2N3184 2N3185 2N318« 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719 2N3720 2N3867 2N3868 2N4999

2N3599

Abstract: 1b01
Contextual Info: -JoütroiI S P A C E FLIG H T P O W E R T R A N S IS T O R S POWER @ 100“C WATTS CASE TYPE 5.0 5.0 5.0 5.0 5.0 4.0 30.0 30.0 30.0 30.0 TO-5 TO-111 TO-111 T O - l ll / I T O -1 l l / I 5.0 5.0 2.0 2.0 2.0 5.0 4.0 4.0 4.0 TO-5 TO-5* TO-5 TO-5 TO-5 5.00 —

2N6226

Contextual Info: OPTEK TECHNOLOGY INC 4AE D • ^asao 00013^3 7TT ■ OTK ^ .y n tü Product Bulletin OTC2220 March 1990 High Speed Switching PNP Transistor Die Type OTC222Û Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits Features • PNP Epitaxial Planar Power Transistor