2N3825 Search Results

2N3823 equivalent

Abstract: 2N3823 transistor 2N3823
Contextual Info: 2N3S23 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR f*r ' * 1 ▼T,”‘ '* V ^ •.,v . M i " : ' V j .*< V - v ’ ' * V r * \¿ ; ’?T * r * ' *-•- '• i, ':* ' u f T • *'•* «íí • ” ’ V , 2* * ‘ r " tì'1 « * CASE TO-72 THE 2N3825 IS AN N-CHANNEL JFET DESIGNED

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

BF225

Abstract: 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254
Contextual Info: Silicon Transistors Case Type No. c^ o T' Maximum Ratings at 25°C amb. C haracteristics SPEC IAL FEATURES 11 = 1“ o CJ ,-V CB V V Ce V V EB V •c A Ptot W !c mA hpE h A - 1 r- *- •, Min. Max. Min. ■c mA M c/s ^CE SAT

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

se5021

Abstract: 2N3444 2N744 2N3606 PE5025 MPSH30 transistor 2N5134 cl-001 2N3252 2n3600
Contextual Info: This Material Copyrighted By Its Respective Manufacturer NATL SEniCOND 6501130 Sfl {DISCRETE} NATL SEMICOND, ÏËJhSD113D DISCRETE 2 8C 0ID353âS 35388 0/ << £ ti z 'a £« St'S y — œ u< <»'—£ûrEç * £Û u - y f > g CN CO CD — s n< O O c n c

DH3724CN

Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
Contextual Info: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N3416 Sprague

Contextual Info: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

sC3228

Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB

transistor 2N3563

Abstract: 2N3563 2N3564 2n3600 2N915 KM9018 MPS3563 MPS3693 MPS3694 MPS3826
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS HFE VCE sat n IC (mA) VCE (V) max (V) IC (mA) min (MHz) Cob Cre* max (PF) 198 # 200 160 400 1 3 8 10 10 5 1 10 10 10 0.5 0.4 10 10 - - . . - 400 600 600 200 200 1.7 1.7 1.7 3.5 3.5 40 100 25 25 20 160 400 -

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group