2N266 Search Results

MP2145

Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63

2N158A

Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670

Contextual Info: 2N2662 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50º V(BR)CBO (V)50 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)100# I(CBO) Max. (A)600u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2669 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)70º V(BR)CBO (V)70 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)100# I(CBO) Max. (A)600u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N2659

Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
Contextual Info: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE

germanium transistors NPN

Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Contextual Info: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A

2N2660

Contextual Info: 2N2660 Ge PNP Power BJT 37.50 Transistors Transistors Bipolar Ge P. 1 of 1 Home Part Number: 2N2660 Online Store 2N2660 Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 2N2666 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)70º V(BR)CBO (V)70 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)100# I(CBO) Max. (A)600u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2667 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)90º V(BR)CBO (V)90 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)100# I(CBO) Max. (A)600u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N206

Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

AD132

Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

2N2660

Contextual Info: 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N6660 and 2N6661 are enhancementmode normally-off transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate

2N3215

Abstract: MT28 TO13 2n3214 Germanium power
Contextual Info: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r

LS 74151

Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363

2N2648

Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974

2N3986

Abstract: LS 2027 2N4146 2N3086 2n3986 sis 2N4148 2N4327 2N1689 LS 2027 amp 2N4331
Contextual Info: ^ discrete devices jemitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current It (»mp«) Mai. Forward M ai. Reverie Voltages V f o m /V ron (volts) (Note 2) Mailmum

2N1100

Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s