2N2909
Abstract: 2N2645 2N3947 TO46 2N2196 2N2195A 2N2297 2N2353 2N3242A 2N4383
Contextual Info: 8134693 SEMICOA " 4Q D eT| 0 1 3 4 ^ 3 0Q0Q135 I NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN 2N2353 2N2195A 2N2353A 2N4383 2M4384 2N2297 2N2909 2N3242A 2N3946 2N3947 2N3053 2N2645 2N3110
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0qqq13h-fl-212n23532n2195a+102k2353a2n43832k43842n22972n29092n3242a2n26452n3947to462n2196
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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2N2310
Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B
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2n19902n20082n21022n2102a+142n21922n2192a2n2192b2n2193150/151a2n23522n23102n2351t0462n23092n22432n2193b2n2193a2n2311
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N3020
Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220
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2n22192n2219a2n22202n2221+112n2221a2n22222n2222a2n2236cbr300000s23n30202n29512n31142n3301st 2n3053
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2N295
Abstract: 2N2891 2N223
Contextual Info: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221
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2n22192n2219a2n22202n2221+92n2221a2n22222n2222a2n22362n22372n22432n2952n28912n223
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3SM diode
Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7553sm diode2n22432n2222b2n22442n22822n22502n23162n22492n2303 sot-232n2306
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2N2102A
Contextual Info: Maximum Ratings Type NPN VcE^Sat @ l c / l b H r e @ *C V CB Volts V CE Volts V EB Volts Cob Min/Max mA Volts mA/mA MHz Min Case pF Max Geometry & Character ization Applicable Letter 1000 120 65 7 40/120 150 0.5 150/15 60 15 TO-5 A 2N2102A 1000 120 65 7
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2n2102a2n2192a2192b2n2193a+62193b2n2194a2194b2n2195a2195b2n2243a
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2n2224
Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272
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en9142n7082n914absy19+122n3605a2n3606a2n22242n2222b2n22442n44182n23742sc321h2n2250esm2369rca 2n22702n2245
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2N2270 equivalent
Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B
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2n19902n20082n21022n2102a+142n21922n2192a2n2192b2n2193150/15npnbsy512n2270 equivalent2n2317dh3725cnq2t3725motorola 2n2270 to-182n1711 motorola2n1990 motorolabfy76
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2S05
Abstract: 2n2510 2N2511
Contextual Info: INTEX/ SEMITRONICS CORP jEinitron 27E D • HflbTEHb 0000201 M I 7W -¿/ discrete devices SEMICONDUCTORS Semitronics Corp. metal can transistors cont'd silicon small signal transistors M i ximum Ratini Onice Type Package 2N2351A NPN TO 2N2352 NPN TO 46 46
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2n29s92n3022n30362n2s05+22n25102n2511
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2N2222B
Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A
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2scs02bfy50bfx50nb311e+13nb311fnb311xnb311ytp51892n11042n2222b2n2244delcolow-power silicon npn2sc1449bc1752sc15712n2362
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CL66
Abstract: 2N3565 2n2349 2N702 2N1388 2SC3368 BSX25 2S701 LOW-POWER SILICON NPN 2N1528
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 2SC3327 04020 2N2349 04021 MMBT3393 MMBT6515 2N1763 2SC563 2SC563 2SC563 Manufacturer 85 90 95 Ie Max A fT (Hz) 20 24 24 24 25 25 25 25 25 25 1.2k 50 120 135 25 25 25
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2sc33272n2349mmbt3393mmbt6515+122n17632sc563pe108s2n1528cl662n35652n7022n13882sc3368bsx252s701low-power silicon npn
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2H2222A
Abstract: 2MM72 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B
Contextual Info: jomitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon small signal transistors Maximum Ratings Oevke Type Package Pd Ambient mW 2*497 2N498 2MS6 2m i mat mn mat mm NPN NPN NPN NPN NPN TO TO TO TO TO 5 5 5 5 5 800 BOO BOO 800 600 E le c tfiu r il ChaiacTu fis ti! s
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2n4982mm722n37w2n372s+82n40722h2222a2n26962n27082n23122n29592n708s2n2195b
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N3020
Abstract: ti 2n3107 N3056
Contextual Info: central se hi co nd u ct or bi D F | n a n t . 3 o o o o sit, i 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. < o 00 — 21 VCE V eb hFE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220
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2n22192n2219a2n2220to-18+62n22212n2221a2n2222n3020ti 2n3107n3056
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2N2222B
Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560
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2ns982n14922n25142n339a+162n5452n719a2n19752n9122n25202n757a2n2222b2n22802n2307bsy872sc696elcoma2n22442n15642n2382delco
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2SC3883
Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812
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2s013982s014022s016512s01655+162sc27912sc27932sc32142s011852s01186ot7232sc38832n2250s2000a2n2222b2n2244sti-812mrf2392n2362sti-8012n2245
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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