2SC563 Search Results

cs1m

Contextual Info: Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

sc 6038

Abstract: 2SC5636 transistor 3669 A 4503 ic 1346 transistor making 528
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

sc 6038

Abstract: a 4503 data sheet A 4503 ic ic a 4503 2SC5635 A 3141 s11
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5635 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

str 1096

Abstract: 307-109 2SC5631
Contextual Info: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier REJ03G0128-0300Z Previous ADE-208-981A(Z Rev.3.00 Oct.20.2003 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

2SC5632

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

2SC5631

Abstract: Hitachi DSA0014 X 0238 CE
Contextual Info: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline

2SC5632

Abstract: S-Mini3-G1
Contextual Info: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the

2SC5633

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5633 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5633 is a super mini package resin sealed

2SC5632

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05

307-109

Abstract: 2SC5631 DSA003645 X 0238 CE
Contextual Info: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A Z 2nd. Edition Mar. 2001 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline

2SC5632

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1

2SC563

Abstract: 2SC563A
Contextual Info: 2SC563, 2SC563A 2SC563, 2SC563A -> ‘J 3 > NPN NPN Epitaxial Planar 7Uti Mfc+nnW«flHM*aJB/Video IF Output Stage 4.95i£max. Unit : mm 4$ IS/Features • 3 ^ ^ * 1 1 ^ 1 C re W /L O W C re ^ Absolute Maximum Ratings Ta=25°C Item ^ 1/ $ & • *"< Symbol

2SC5632

Contextual Info: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the

sc 6038

Abstract: 2SC5634 a 4503 data sheet
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5634 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

CP25A

Abstract: 2SC5637
Contextual Info: Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

Contextual Info: Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

TA-2593

Contextual Info: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

hitachi ha 1125

Abstract: marking S76
Contextual Info: 2SC5631 Silicon NPN Epitaxial UHF / VHF wide band amplifier HITACHI Preliminary 1st. Edition Jul. 1999 Features • High gain bandwidth product fT = 11 GHztyp. • High power gain and low noise figure.; PG = 10 dB typ, , NF= 1.2dB typ. at f = 900 MHz Outline

2SC5638

Abstract: ENN6466
Contextual Info: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).