2N1711 M Search Results

Contextual Info: rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications.

2n1711

Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 225 Qualified Level Devices 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1

transistor 2n1711

Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω

2N1711

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Devices 2N1711 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation ia> TA = +25°C (1)

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2N1711

Contextual Info: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

transistor 2N1711

Abstract: 2N1711 cdil 2N1711 2N1711 Data Sheet equivalent transistor 2N1711 RS510
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.

2N3019A

Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

2N2243

Contextual Info: DEVICE TYPF pa c k a g e ByCEO BVC80 BVEBO ICBO @ VCB IV i M- N i V l M>N . MN i •• A1 MAX JV» HFE @ VC & IC MIN MAR .V COB J v*. FT 2N1507 2N1566 2N16I3 2N1711 2N1889 NPN NPN NPN NPN NPN ro-5 ro-5 TO 5 ro- 5 TO-5 30 60 50 50 60 60 00 75 75 100 5 5 7

BSY39

Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent
Contextual Info: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

BC140 equivalent

Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2n1711 complement

Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86
Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,

2n731

Abstract: 2N718 2n1413 2n697
Contextual Info: TYPES 2M6ifo. ¿Wise* 8. 2N730, 2N731, 7N9S6 :^ v i? n 2N1613. 2NT711 N-P-N SILICON TRANSISTORS ‘/ . K W . ; > . M 1 ¿ m b ? m w k , - l ; . B U L L E T I N N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed lor

CV7756

Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued